No Arabic abstract
The gigantic decrease of resistance by an applied magnetic field, which is often referred to as colossal magnetoresistance (CMR), has been an attracting phenomenon in strongly correlated electron systems. The discovery of CMR in manganese oxide compounds has developed the science of strong coupling among charge, orbital, and spin degrees of freedom. CMR is also attracting scientists from the viewpoint of possible applications to sensors, memories, and so on. However, no application using CMR effect has been achieved so far, partly because the CMR materials which satisfy all of the required conditions for the application, namely, high operating temperature, low operating magnetic field, and sharp resistive change, have not been discovered. Here we report a resistance change of more than two-orders of magnitude at a magnetic field lower than 2 T near 300 K in an A-site ordered NdBaMn_2_O_6_ crystal. When temperature and a magnetic field sweep from insulating (metallic) phase to metallic (insulating) phase, the insulating (metallic) conduction changes to the metallic (insulating) conduction within 1 K and 0.5 T, respectively. The CMR is ascribed to the melting of the charge ordering. The entropy change which is estimated from the B-T phase diagram is smaller than what is expected for the charge and orbital ordering. The suppression of the entropy change is attributable to the loss of the short range ferromagnetic fluctuation of Mn spin moments, which an important key of the high temperature and low magnetic field CMR effect.
La0.7Ba0.3MnO3 (LBMO):Agx (x = 0.0, 0.1, 0.2, 0.3, and 0.4) composites are synthesized by solid-state reaction route, the final sintering temperatures are varied from 1300 (LBMO1300Ag) to 1400 0C (LBMO1400Ag), and their physical properties are compared as a function of temperature and Ag content. All samples are crystallized in single phase accompanied by some distortion in main structural phase peaks at higher angles with increase in silver content. Though the lattice parameters (a, c) decrease, the b increases slightly with an increase in Ag content. The scanning electron micrographs (SEM) showed better grains morphology in terms of size and diffusion of grain boundaries with an increase in Ag content. In both LBMO1300Ag and LBMO1400Ag series the metal insulator transition (TMI) and accompanied paramagnetic-ferromagnetic transition (TC) temperatures are decreased with increase in Ag content. The sharpness of MI transition, defined by temperature coefficient of resistance (TCR), is improved for Ag added samples. At a particular content of Ag(0.3), the TMI and TC are tuned to 300K and maximum magneto-resistance at 7Tesla applied field (MR7T) of up to 55% is achieved at this temperature, which is more than double to that as observed for pure samples of the both 1300 and 1400 0C series at same temperature. The MR7T is further increased to above 60% for LBMOAg(0.4) samples, but is at 270K. The MR7T is measured at varying temperatures of 5, 100, 200, 300, and 400K in varying fields from +/- 7 Tesla, which exhibits U and V type shapes. Summarily, the addition of Ag in LBMO improves significantly the morphology of the grains and results in better physical properties of the parent manganite system.
The 5$d$ based SrIrO$_3$ represents prototype example of nonmagnetic correlated metal which mainly originates from a combined effect of spin-orbit coupling, lattice dimensionality and crystal structure. Therefore, tuning of these parameters results in diverse physical properties in this material. Here, we study the structural, magnetic and electrical transport behavior in epitaxial SrIrO$_3$ film ($sim$ 40 nm) grown on SrTiO$_3$ substrate. Opposed to bulk material, the SrIrO$_3$ film exhibits a ferromagnetic ordering at low temperature below $sim$ 20 K. The electrical transport data indicate an insulating behavior where the nature of charge transport follows Motts variable-range-hopping model. A positive magnetoresistance is recorded at 2 K which has correlation with magnetic moment. We further observe a nonlinear Hall effect at low temperature ($<$ 20 K) which arises due to an anomalous component of Hall effect. An anisotropic behavior of both magnetoresistance and Hall effect has been evidenced at low temperature which coupled with anomalous Hall effect indicate the development of ferromagnetic ordering. We believe that an enhanced (local) structural distortion caused by lattice strain at low temperatures induces ferromagnetic ordering, thus showing structural instability plays vital role to tune the physical properties in SrIrO$_3$.
Low as well as high-temperature electron and x-ray diffraction studies have been carried out on a rare-earth free B-site disordered electron-doped manganite SrMn0.875.Mo0.125O3-{delta} in the temperature range of 83K to 637K. These studies reveal the occurrence of strong charge ordering (CO) at room temperature in a pseudo tetragonally distorted perovskite phase with space-group Pmmm. Non integral modulation vector of 8.95 times along [-110] indicates a charge density wave type modulation. The CO phase with basic perovskite structure Pmmm transforms to a charge disorder cubic phase through a first order phase transition at 355K. Supporting temperature dependent measurements of resistance and magnetization show a metal-insulator and antiferromagnetic transitions across 355K with a wide hysterisis ranging from 150K to 365K. The occurrence of pseudo tetragonality of the basic perovskite lattice with c/a < 1 together with charge-ordered regions with 2-dimensional modulation have been analyzed as the coexistence of two CO phases with 3dx2/3dy2 type and 3dx2-y2 type orbital ordering.
Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.
Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 {mu}B/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to developing novel oxide quantum materials & heterostructures.