No Arabic abstract
Low-loss electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) probes the valence electron density and relevant optoelectronic properties such as band gap energies and other band structure transitions. The measured spectra can be formulated in a dielectric theory framework, comparable to optical spectroscopies and ab-initio simulations. Moreover, Kramers-Kronig analysis (KKA), an inverse algorithm based on the homonym relations, can be employed for the retrieval of the complex dielectric function (CDF). However, spurious contributions traditionally not considered in this framework typically impact low-loss EELS modifying the spectral shapes and precluding the correct measurement and retrieval of the dielectric information. A relativistic KKA algorithm is able to account for the bulk and surface radiative-loss contributions to low-loss EELS, revealing the correct dielectric properties. Using a synthetic low-loss EELS model, we propose some modifications on the naive implementation of this algorithm that broadens its range of application. The robustness of the algorithm is improved by regularization, appliying previous knowledge about the shape and smoothness of the correction term. Additionally, our efficient numerical integration methodology allows processing hyperspectral datasets in a reasonable amount of time. Harnessing these abilities, we show how simultaneous relativistic KKA processing of several spectra can share information to produce an improved result.
A Kramers-Kronig receiver with a continuous wave tone added digitally at the transmitter is combined with a digital resolution enhancer to limit the increase in transmitter quantization noise. Performance increase is demonstrated, as well as the ability to reduce the number of bits in the digital-to-analog converter.
The macroscopic electric permittivity of a given medium may depend on frequency, but this frequency dependence cannot be arbitrary, its real and imaginary parts are related by the well-known Kramers-Kronig relations. Here, we show that an analogous paradigm applies to the macroscopic electric conductivity. If the causality principle is taken into account, there exists Kramers-Kronig relations for conductivity, which are mathematically equivalent to the Hilbert transform. These relations impose strong constraints that models of heterogeneous media should satisfy to have a physically plausible frequency dependence of the conductivity and permittivity. We illustrate these relations and constraints by a few examples of known physical media. These extended relations constitute important constraints to test the consistency of past and future experimental measurements of the electric properties of heterogeneous media.
The ultimate precision in any measurement is dictated by the physical process implementing the observation. The methods of quantum metrology have now succeeded in establishing bounds on the achievable precision for phase measurements over noisy channels. In particular, they demonstrate how the Heisenberg scaling of the precision can not be attained in these conditions. Here we discuss how the ultimate bound in presence of loss has a physical motivation in the Kramers-Kronig relations and we show how they link the precision on the phase estimation to that on the loss parameter.
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation using the spin drift diffusion equation including the effect of the spin-dependent interfacial resistance of tunneling barriers. Unlike the case of metallic spin valves, the bias dependence of the resistance-area product for a ferromagnet/MgO/Si interface, resulting in the reappearance of the conductance mismatch, plays a central role to induce the deviation.
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density of threading dislocations, revealing that the QD layers closer to the substrate behave as traps for non-radiative point defects. During atom probe tomography experiments combined with in-situ micro-photoluminescence, it was possible to isolate the optical emission of a single QD located in the topmost QD stack, closer to the sample surface. The single QD emission line displayed a spectral shift during the experiment confirming the relaxation of elastic strain due to material evaporation during atom probe tomography.