No Arabic abstract
For semiconductors used in photovoltaic devices, the effective mass approximation allows calculation of important material properties from first-principles calculations, including optical properties (e.g. exciton binding energies), defect properties (e.g. donor and acceptor levels) and transport properties (e.g. carrier mobilities). The conduction and valence bands of semiconductors are commonly approximated as parabolic around their extrema, which gives a simple theoretical description, but ignores the complexity of real materials. In this work, we use density functional theory to assess the impact of band non-parabolicity on four common thin-film photovoltaic materials - GaAs, CdTe, Cu$_2$ZnSnS$_4$ and CH$_3$NH$_3$PbI$_3$ - at temperatures and carrier densities relevant for real-world applications. First, we calculate the effective mass at the band edges. We compare finite-difference, unweighted least-squares and thermally weighted least-squares approaches. We find that the thermally weighted least-squares method reduces sensitivity to the choice of sampling density. Second, we employ a Kane quasi-linear dispersion to quantify the extent of non-parabolicity, and compare results from different electronic structure theories to consider the effect of spin-orbit coupling and electron exchange. Finally, we focus on the halide perovskite CH$_3$NH$_3$PbI$_3$ as a model system to assess the impact of non-parabolicity on calculated electron transport and optical properties at high carrier concentrations. We find that at a concentration of 10$^{20}$ cm$^-3$ the optical effective mass increases by a factor of two relative to the low carrier-concentration value, and the polaron mobility decreases by a factor of three. Our work suggests that similar adjustments should be made to the predicted optical and transport properties of other semiconductors with significant band non-parabolicity.
Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems.
We demonstrate that cation-related localized states strongly perturb the band structure of $text{Al}_{1-x}text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $text{Al}_{1-x}text{In}_x$N for low In composition, $x$, and that these localized states dominate the evolution of the band structure with increasing $x$. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in $text{Al}_{1-x}text{In}_x$N.
We study the electronic structures and dielectric functions of the simple hydrides LiH, NaH, MgH2 and AlH3, and the complex hydrides Li3AlH6, Na3AlH6, LiAlH4, NaAlH4 and Mg(AlH4)2, using first principles density functional theory and GW calculations. All these compounds are large gap insulators with GW single particle band gaps varying from 3.5 eV in AlH3 to 6.5 eV in the MAlH4 compounds. The valence bands are dominated by the hydrogen atoms, whereas the conduction bands have mixed contributions from the hydrogens and the metal cations. The electronic structure of the aluminium compounds is determined mainly by aluminium hydride complexes and their mutual interactions. Despite considerable differences between the band structures and the band gaps of the various compounds, their optical responses are qualitatively similar. In most of the spectra the optical absorption rises sharply above 6 eV and has a strong peak around 8 eV. The quantitative differences in the optical spectra are interpreted in terms of the structure and the electronic structure of the compounds.
Magnetoelectric multiferroic composite of two types of multiferroic (Type I and II) consisting BiFeO3 and TbMnO3 is studied for enhanced magnetic and transport properties. A narrower band gap is estimated from the UV-visible absorption spectrum from that of BiFeO3 and TbMnO3. With known value of band gap, the band structure was estimated from the valence band x-ray photoemission spectra (XPS) and ultra violet photoemission spectra (UPS). The valence and conduction band was found at 1.0 eV and 0.45 eV above and below the Fermi level respectively. Thus the insulating behavior of the system is understood from the reconstruction of the energy bands at the interface which happens due to lattice mismatch of the two materials. The large coercivity and the increase on the magnetization value are understood to be due to superexchange interaction between different Mn ions (Mn2+, Mn3+ and Mn4+). From the composition study of EDXA and core level x-ray photoemission spectra oxygen vacancy was found which in turn creates the mixed valence state of Mn to maintain the charge neutrality.
In the framework of four-band envelope-function formalism, developed earlier for spherical semiconductor nanocrystals, we study the electronic structure and optical properties of quantum-confined lead-salt (PbSe and PbS) nanowires (NWs) with a strong coupling between the conduction and the valence bands. We derive spatial quantization equations, and calculate numerically energy levels of spatially quantized states of a transverse electron motion in the plane perpendicular to the NW axis, and electronic subbands developed due to a free longitudinal motion along the NW axis. Using explicit expressions for eigenfunctions of the electronic states, we also derive analytical expressions for matrix elements of optical transitions and study selection rules for interband absorption. Next we study a two-particle problem with a conventional long-range Coulomb interaction and an interparticle coupling via medium polarization. The obtained results show that due to a large magnitude of the high-frequency dielectric permittivity of PbSe material, and hence, a high dielectric NW/vacuum contrast, the effective coupling via medium polarization significantly exceeds the effective direct Coulomb coupling at all interparticle separations along the NW axis. Furthermore, the strong coupling via medium polarization results in a bound state of the longitudinal motion of the lowest-energy electron-hole pair (a longitudinal exciton), while fast transverse motions of charge carriers remain independent of each other.