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Register a new userLone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells
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The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu$_2$ZnSnS$_4$ (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5$s^2$) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(II) and Sn(IV). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding $10^{-12}$ cm$^2$. The results highlight a connection between redox active cations and `killer defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing n$s^2$ cations.
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We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu$_2$ZnSnS$_4$ surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit voltage measurements on Cu$_2$ZnSnS$_4$ solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu$_2$ZnSnS$_4$ solar cells.
The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting long spin lifetimes give rise to a large influence of the electron spin on charge transport which can be exploited in spintronic devices or to improve solar cell efficiencies. Magnetic resonance techniques are particularly helpful to elucidate the microscopic structure of paramagnetic states in semiconductors as well as the transport processes they are involved in. However, in organic devices the nature of the dominant spin-dependent processes is still subject to considerable debate. Using multi-frequency pulsed electrically detected magnetic resonance (pEDMR), we show that the spin-dependent response of P3HT/PCBM solar cells at low temperatures is governed by bipolar polaron pair recombination involving the positive and negative polarons in P3HT and PCBM, respectively, thus excluding a unipolar bipolaron formation as the main contribution to the spin-dependent charge transfer in this temperature regime. Moreover the polaron-polaron coupling strength and the recombination times of polaron pairs with parallel and antiparallel spins are determined. Our results demonstrate that the pEDMR pulse sequences recently developed for inorganic semiconductor devices can very successfully be transferred to the study of spin and charge transport in organic semiconductors, in particular when the different polarons can be distinguished spectrally.
Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus commonly classified in the literature as 1D semiconductors. However, based on first-principles calculations, here we show that inter-ribbon interactions are present in Sb2X3 beyond the vdW regime. The origin of the anisotropic structures is related to the stereochemical activity of the Sb 5s lone pair according to electronic structure analysis. The impacts of structural anisotropy on the electronic and optical properties are further examined, including the presence of higher dimensional Fermi surfaces for charge carrier transport. Our study provides guidelines for optimising the performance of Sb2X3-based solar cells via device structuring based on the underlying crystal anisotropy.
Based on first-principles calculations, we show that chemically active metal ns2 lone pairs play an important role in exciton relaxation and dissociation in low-dimensional halide perovskites. We studied excited-state properties of several recently discovered luminescent all-inorganic and hybrid organic-inorganic zero-dimensional (0D) Sn and Pb halides. The results show that, despite the similarity in ground-state electronic structure between Sn and Pb halide perovskites, the chemically more active Sn2+ lone pair leads to stronger excited-state structural distortion and larger Stokes shift in Sn halides. The enhanced Stokes shift hinders excitation energy transport, which reduces energy loss to defects and increases the photoluminescence quantum efficiency (PLQE). The presence of the ns2 metal cations in the 0D halide perovskites also promotes the exciton dissociation into electron and hole polarons especially in all-inorganic compounds, in which the coupling between metal-halide clusters is significant.
Cuprous oxide has been conceived as a potential alternative to traditional organic hole transport layers in hybrid halide perovskite-based solar cells. Device simulations predict record efficiencies using this semiconductor, but experimental results do not yet show this trend. More detailed knowledge about the Cu$_2$O/perovskite interface is mandatory to improve the photoconversion efficiency. Using density functional theory calculations, here we study the interfaces of CH$_3$NH$_3$PbI$_3$ with Cu$_2$O to assess their influence on device performance. Several atomistic models of these interfaces are provided for the first time, considering different compositions of the interface atomic planes. The interface electronic properties are discussed on the basis of the optimal theoretical situation, but in connection with the experimental realizations and device simulations. It is shown that the formation of vacancies in the Cu$_2$O terminating planes is essential to eliminate dangling bonds and trap states. The four interface models that fulfill this condition present a band alignment favorable for photovoltaic conversion. Energy of adhesion, and charge transfer across the interfaces are also studied. The termination of CH$_3$NH$_3$PbI$_3$ in PbI$_2$ atomic planes seems optimal to maximize the photoconversion efficiency.
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