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Register a new userLong spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers
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Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current for a smaller cell while keeping the thermal stability of magnetic cells for non-volatility. As the cell size reduces, however, it becomes extremely difficult to meet this requirement with ferromagnets because spin-transfer torque for ferromagnets is a surface torque due to rapid spin dephasing, leading to the 1/ferromagnet-thickness dependence of the spin-torque efficiency. Requirement of a larger switching current for a thicker and thus more thermally stable ferromagnetic cell is the fundamental obstacle for high-density non-volatile applications with ferromagnets. Theories predicted that antiferromagnets have a long spin coherence length due to the staggered spin order on an atomic scale, thereby resolving the above fundamental limitation. Despite several spin-torque experiments on antiferromagnets and ferrimagnetic alloys, this prediction has remained unexplored. Here we report a long spin coherence length and associated bulk-like-torque characteristic in an antiferromagnetically coupled ferrimagnetic multilayer. We find that a transverse spin current can pass through > 10 nm-thick ferrimagnetic Co/Tb multilayers whereas it is entirely absorbed by 1 nm-thick ferromagnetic Co/Ni multilayer. We also find that the switching efficiency of Co/Tb multilayers partially reflects a bulk-like-torque characteristic as it increases with the ferrimagnet-thickness up to 8 nm and then decreases, in clear contrast to 1/thickness-dependence of Co/Ni multilayers. Our results on antiferromagnetically coupled systems will invigorate researches towards energy-efficient spintronic technologies.
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An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise solely due to interfacial spin-orbit coupling, namely Rashba-Eldestein effects at metal/insulator interfaces. In magnetically soft NiFe sandwiched between a weak spin-orbit metal (Ti) and insulator (Al$_2$O$_3$), this torque appears as an effective field, which is significantly larger than the Oersted field and sensitive to insertion of an additional layer between NiFe and Al$_2$O$_3$. Our findings point to new routes for tuning spin-orbit torques by engineering interfacial electric dipoles.
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-orbit torque induced magnetization switching of ferrimagnetic Co1-xTbx films with perpendicular magnetic anisotropy. Current induced switching is demonstrated in all of the studied film compositions, including those near the magnetization compensation point. The spin-orbit torque induced effective field is further quantified in the domain wall motion regime. A divergent behavior that scales with the inverse of magnetic moment is confirmed close to the compensation point, which is consistent with angular momentum conservation. Moreover, we also quantify the Dzyaloshinskii-Moriya interaction energy in the Ta/Co1-xTbx system and we find that the energy density increases as a function of the Tb concentration. The demonstrated spin-orbit torque switching, in combination with the fast magnetic dynamics and minimal net magnetization of ferrimagnetic alloys, promises spintronic devices that are faster and with higher density than traditional ferromagnetic systems.
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely proportional to the thickness of the ferromagnetic layer, sizable effect has only been realized in bilayers with an ultrathin ferromagnetic layer. Here we demonstrate that, by stacking ultrathin Pt and FeMn alternately, both ferromagnetic properties and current induced spin-orbit torque can be achieved in FeMn/Pt multilayers without any constraint on its total thickness. The critical behavior of these multilayers follows closely three-dimensional Heisenberg model with a finite Curie temperature distribution. The spin torque effective field is about 4 times larger than that of NiFe/Pt bilayer with a same equivalent NiFe thickness. The self-current generated spin torque is able to switch the magnetization reversibly without the need for an external field or a thick heavy metal layer. The removal of both thickness constraint and necessity of using an adjacent heavy metal layer opens new possibilities for exploiting spin-orbit torque for practical applications.
Strong damping-like spin-orbit torque ({tau}DL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported {tau}DL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected {tau}DL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel {tau}DL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This {tau}DL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for developing single-layer-based spin-torque memory, oscillator, and logic technologies.
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.
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