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Register a new userContribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
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Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is beneficial for stable topological superconducting states as well as for correlation of multiple Majorana zero modes in a complex network. Here, we investigate near-surface InAs 2DEGs (13 nm away from the surface) grown on GaSb(001) substrates, whose lattice constant is closely matched to InAs, by molecular beam epitaxy. The effect of 10-nm-thick top barrier to the mobility is studied by comparing Al$_{0.9}$Ga$_{0.1}$Sb and In$_{0.75}$Ga$_{0.25}$As as a top barrier on otherwise identical InAs quantum wells grown with identical bottom barrier and buffer layers. A 3-nm-thick capping layer on Al$_{0.9}$Ga$_{0.1}$Sb top barrier also affects the 2DEG electronic transport properties by modifying scattering from 2D remote ionized impurities at the surface. The highest transport mobility of 650,000 cm$^2$/Vs with an electron density of 3.81 $times$ 10$^{11}$ cm$^{-2}$ was observed in an InAs 2DEG with an Al$_{0.9}$Ga$_{0.1}$Sb top barrier and an In$_{0.75}$Ga$_{0.25}$As capping layer. Analysis of Shubnikov-de Haas oscillations in the high mobility sample suggests that long-range scattering, such as remote ionized impurity scattering, is the dominant scattering mechanism in the InAs 2DEGs grown on GaSb(001) substrates. In comparison to InAs quantum wells grown on lattice-mismatched InP, the ones grown on GaSb show smoother surface morphology and higher quantum mobility. However, In$_{0.75}$Ga$_{0.25}$As top barrier in InAs quantum well grown on GaSb limits the transport mobility by charged dislocations formed in it, in addition to the major contribution to scattering from the alloy scattering.
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We present molecular beam epitaxial grown single- and double-side $delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm$^2$/Vs at cryogenic temperatures and 58 000 cm$^2$/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well pronounced Shubnikov$-$de Haas oscillations reveals a high spin-orbit coupling with an effective $g$-factor of $-38.4$ in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.
High mobility, strong spin-orbit coupling, and large Lande g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices.
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands.
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
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