No Arabic abstract
We propose a realistic scheme to construct anomalous Floquet Chern topological insulators using spin-1/2 particles carrying out a discrete-time quantum walk in a two-dimensional lattice. By Floquet engineering the quantum-walk protocol, an Aharonov-Bohm geometric phase is imprinted onto closed-loop paths in the lattice, thus realizing an abelian gauge field---the analog of a magnetic flux threading a two-dimensional electron gas. We show that in the strong field regime, when the flux per plaquette is a sizable fraction of the flux quantum, magnetic quantum walks give rise to nearly flat energy bands featuring nonvanishing Chern numbers. Furthermore, we find that because of the nonperturbative nature of the periodic driving, a second topological number---the so-called RLBL invariant---is necessary to fully characterize the anomalous Floquet topological phases of magnetic quantum walks and to compute the number of topologically protected edge modes expected at the boundaries between different phases. In the second part of this article, we discuss an implementation of this scheme using neutral atoms in two-dimensional spin-dependent optical lattices, which enables the generation of arbitrary magnetic-field landscapes, including those with sharp boundaries. The robust atom transport, which is observed along boundaries separating regions of different field strength, reveals the topological character of the Floquet Chern bands.
Higher order topological insulators (HOTI) have emerged as a new class of phases, whose robust in-gap corner modes arise from the bulk higher-order multipoles beyond the dipoles in conventional topological insulators. Here, we incorporate Floquet driving into HOTIs, and report for the first time a dynamical polarization theory with anomalous non-equilibrium multipoles. Further, a proposal to detect not only corner states but also their dynamical origin in cold atoms is demonstrated, with the latter one never achieved before. Experimental determination of anomalous Floquet corner modes are also proposed.
We explore the non-equilibrium response of Chern insulators. Focusing on the Haldane model, we study the dynamics induced by quantum quenches between topological and non-topological phases. A notable feature is that the Chern number, calculated for an infinite system, is unchanged under the dynamics following such a quench. However, in finite geometries, the initial and final Hamiltonians are distinguished by the presence or absence of edge modes. We study the edge excitations and describe their impact on the experimentally-observable edge currents and magnetization. We show that, following a quantum quench, the edge currents relax towards new equilibrium values, and that there is light-cone spreading of the currents into the interior of the sample.
Achieving topologically-protected robust transport in optical systems has recently been of great interest. Most topological photonic structures can be understood by solving the eigenvalue problem of Maxwells equations for a static linear system. Here, we extend topological phases into dynamically driven nonlinear systems and achieve a Floquet Chern insulator of light in nonlinear photonic crystals (PhCs). Specifically, we start by presenting the Floquet eigenvalue problem in driven two-dimensional PhCs and show it is necessarily non-Hermitian. We then define topological invariants associated with Floquet bands using non-Hermitian topological band theory, and show that topological band gaps with non-zero Chern number can be opened by breaking time-reversal symmetry through the driving field. Furthermore, we show that topological phase transitions between Floquet Chern insulators and normal insulators occur at synthetic Weyl points in a three-dimensional parameter space consisting of two momenta and the driving frequency. Finally, we numerically demonstrate the existence of chiral edge states at the interfaces between a Floquet Chern insulator and normal insulators, where the transport is non-reciprocal and uni-directional. Our work paves the way to further exploring topological phases in driven nonlinear optical systems and their optoelectronic applications, and our method of inducing Floquet topological phases is also applicable to other wave systems, such as phonons, excitons, and polaritons.
The Floquet Hamiltonian has often been used to describe a time-periodic system. Nevertheless, because the Floquet Hamiltonian depends on a micro-motion parameter, the Floquet Hamiltonian with a fixed micro-motion parameter cannot faithfully represent a driven system, which manifests as the anomalous edge states. Here we show that an accurate description of a Floquet system requires a set of Hamiltonian exhausting all values of the micro-motion parameter, and this micro-motion parameter can be viewed as an extra synthetic dimension of the system. Therefore, we show that a $d$-dimensional Floquet system can be described by a $d+1$-dimensional static Hamiltonian, and the advantage of this representation is that the periodic boundary condition is automatically imposed along the extra-dimension, which enables a straightforward definition of topological invariants. The topological invariant in the $d+1$-dimensional system can ensure a $d-1$-dimensional edge state of the $d$-dimensional Floquet system. Here we show two examples where the topological invariant is a three-dimensional Hopf invariant. We highlight that our scheme of classifying Floquet topology on the micro-motion space is different from the previous classification of Floquet topology on the time space.
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.