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Register a new userSublattice symmetry breaking and Kondo-effect enhancement in strained graphene
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Kondo physics in doped monolayer graphene is predicted to exhibit unusual features due to the linear vanishing of the pristine materials density of states at the Dirac point. Despite several attempts, conclusive experimental observation of the phenomenon remains elusive. One likely obstacle to identification is a very small Kondo temperature scale $T_K$ in situations where the chemical potential lies near the Dirac point. We propose tailored mechanical deformations of monolayer graphene as a means of revealing unique fingerprints of the Kondo effect. Inhomogeneous strains are known to produce specific alternating changes in the local density of states (LDOS) away from the Dirac point that signal sublattice symmetry breaking effects. Small LDOS changes can be amplified in an exponential increase or decrease of $T_K$ for magnetic impurities attached at different locations. We illustrate this behavior in two deformation geometries: a circular bubble and a long fold, both described by Gaussian displacement profiles. We calculate the LDOS changes for modest strains and analyze the relevant Anderson impurity model describing a magnetic atom adsorbed in either a top-site or a hollow-site configuration. Numerical renormalization-group solutions of the impurity model suggest that higher expected $T_K$ values, combined with distinctive spatial patterns under variation of the point of graphene attachment, make the top-site configuration the more promising for experimental observation of signatures of the Kondo effect. The strong strain sensitivity of $T_K$ may lift top-site Kondo physics into the range experimentally accessible using local probes such as scanning tunneling microscopy.
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Atomic collapse can be observed in graphene because of its large effective fine structure constant, which enables this phenomenon to occur for an impurity charge as low as $Z_csim 1-2$. Here, we investigate the effect of the sublattice symmetry on molecular collapse in two spatially separated charge tunable vacancies, that are located on the same (A-A type) or different (A-B type) sublattices. We find that the broken sublattice symmetry: (1) does not affect the location of the main bonding and anti-bonding molecular collapse peaks, (2) but shifts the position of the satellite peaks, because they are a consequence of the breaking of the local sublattice symmetry, and (3) there are vacancy characteristic collapse peaks that only occur for A-B type vacancies, which can be employed to distinguish them experimentally from the A-A type. As the charge, energy, and separation distance increase, the additional collapse features merge with the main molecular collapse peaks. We show that the spatial distribution around the vacancy site of the collapse states allows us to differentiate the molecular from the frustrated collapse.
The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of the terms involved (few tens of ueV). These low energy terms include sublattice splitting, the Rashba and the intrinsic spin-orbit coupling, whose balance determines the topological properties. In this work, we unravel the contributions arising from the sublattice and the intrinsic spin orbit splitting in graphene on hexagonal boron-nitride. Employing resistively-detected electron spin resonance, we measure a sublattice splitting of the order of 20E-6 eV, and confirm an intrinsic spin orbit coupling of approximately 45E-6 eV. The dominance of the latter suggests a topologically non-trivial state, involving fascinating properties. Electron spin resonance is a promising route towards unveiling the intriguing band structure at low energy scales.
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory of the strain-induced VHE starting from the quantum Boltzmann equation. This allows us to show that, averaging over short-range impurity configurations destroys quantum coherence between valleys, leaving the elastic scattering time and inter-valley scattering rate as the only parameters characterizing the transport theory. Using the theory, we compute the nonlocal resistance of a Hall bar device in the diffusive regime. Our theory is also relevant for the study of moderate strain effects in the (nonlocal) transport properties of other two-dimensional materials and van der Walls heterostructures.
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbons lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.
Recent studies have shown that moir{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the 3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moir{e} bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $sim 0.1%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $sim$ 200{AA}, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moir{e} bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.
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