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Register a new userElectric field tuning spin splitting in topological insulator quantum dots doped with a single magnetic ion
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We investigate theoretically the electron spin states in disk-shaped HgTe topological insulator quantum dots (TIQDs) containing a single magnetic $Mn^{2+}$ ion. We show that the energy spectrum and the electron density distribution of the topological edge states in HgTe TIQD can be modulated significantly by the position of the magnetic $Mn^{2+}$ ion. The numerical results further demonstrate that the electric fields not only tune the spin splittings of edge states via the $emph{sp-d}$ exchange interaction between the electron (hole) and the magnetic $Mn^{2+}$ ion but also give rise to the bright-to-dark transitions and anti-crossing behaviors in the photoluminescence (PL) spectra. Such spin properties of HgTe TIQDs with single $Mn^{2+}$ ion as illustrated in this work could offer a new platform for topological electro-optical devices.
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We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscillators. The electron-electron, electron-hole Coulomb as well as the short-range electron spin-Mn spin and hole spin-Mn spin contact exchange interactions are included. The electronic states of the photo-excited electron-hole-Mn complex and of the final electron-Mn complex are expanded in a finite number of configurations and the full interacting Hamiltonian is diagonalized numerically. The emission spectrum is predicted as a function of photon energy for a given number of electrons and different number of confined electronic quantum dot shells. We show how emission spectra allow to identify the number of electronic shells, the number of electrons populating these shells and, most importantly, their spin. We show that electrons not interacting directly with the spin of Mn ion do so via electron-electron interactions. This indirect interaction is a strong effect even when Mn impurity is away from the quantum dot center.
We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and polarizability of neutral and positively charged excitons weakly confined in GaAs quantum dots by measuring their light emission under the influence of a variable electric field applied along the growth direction. Calculations based on the configuration-interaction method show excellent quantitative agreement with the experiment and allow us to elucidate the role of Coulomb interactions among the confined particles and -- even more importantly -- of electronic correlation effects on the Stark shifts. Moreover, we show how the electric field alters properties such as built-in dipole, binding energy, and heavy-light hole mixing of multiparticle complexes in weakly confining systems, underlining the deficiencies of commonly used models for the quantum-confined Stark effect.
Spin resonance of single spin centers bears great potential for chemical structure analysis, quantum sensing and quantum coherent manipulation. Essential for these experiments is the presence of a two-level spin system whose energy splitting can be chosen by applying a magnetic field. In recent years, a combination of electron spin resonance (ESR) and scanning tunneling microscopy (STM) has been demonstrated as a technique to detect magnetic properties of single atoms on surfaces and to achieve sub-${mu}$eV energy resolution. Nevertheless, up to now the role of the required magnetic fields has not been elucidated. Here, we perform single-atom ESR on individual Fe atoms adsorbed on magnesium oxide (MgO), using a 2D vector magnetic field as well as the local field of the magnetic STM tip in a commercially available STM. We show how the ESR amplitude can be greatly improved by optimizing the magnetic fields, revealing in particular an enhanced signal at large in-plane magnetic fields. Moreover, we demonstrate that the stray field from the magnetic STM tip is a versatile tool. We use it here to drive the electron spin more efficiently and to perform ESR measurements at constant frequency by employing tip-field sweeps. Lastly, we show that it is possible to perform ESR using only the tip field, under zero external magnetic field, which promises to make this technique available in many existing STM systems.
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk carriers vary as a function of film thickness. We observed a gap opening at the Dirac point for films thinner than four quintuple layers, due to the coupling of the top and bottom surfaces. Moreover, the top surface state band gap of the three quintuple layer films was found to be tunable by back gate, indicating the possibility of observing a topological phase transition in this system. Our results are well explained by an effective model of 3D topological insulator thin films with structure inversion asymmetry, indicating that three quintuple layer Sb2Te3 films are topologically nontrivial and belong to the quantum spin Hall insulator class.
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1mu m < lambda < 1.3 mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 mu eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
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