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Unconventional field-effect transistor composed of electrons floating on liquid helium

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 Added by Johannes Pollanen
 Publication date 2018
  fields Physics
and research's language is English




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We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.



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The system of electrons trapped in vacuum above the liquid helium surface displays the highest mobilities known in condensed matter physics. We provide a brief summary of the experimental and theoretical results obtained for this system. We then show that a quasi-2D set of N > 10^8 electrons in vacuum trapped in 1D hydrogenic levels above a micron-thick helium film can be used as an easily manipulated strongly interacting set of quantum bits. Individual electrons are laterally confined by micron sized metal pads below the helium. Information is stored in the lowest hydrogenic levels. Using electric fields at temperatures of 10 mK, changes in the wave function can be made in nanoseconds. Wave function coherence times are .1 millisecond. The wave function is read out using an inverted dc voltage which releases excited electrons from the surface, or using SETs attached to the metal pads which control the electrons.
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