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Register a new userLooking for new thermoelectric materials among the TMX intermetallics using high-throughput calculations
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Within 4 different crystal structures, 2280 ternary intermetallic configurations have been investigated via high-throughput density functional theory calculations in order to discover new semiconducting materials. The screening is restricted to intermetallics with the equimolar composition TMX, where T is a transition metal from the Ti, V, Cr columns, Sr, Ba, Y and La, M an element from the first line of transition metals and X a sp elements (Al, P, Si, Sn and Sb), i.e. to a list of 24 possible elements. Since the calculations are done combinatorically, every possible ternary composition is considered, even those not reported in the literature. All these TMX configurations are investigated in the 4 most reported structure-types: TiNiSi, MgAgAs, BeZrSi and ZrNiAl. With an excellent agreement between calculations and literature for the reported stable phases, we identify 472 possible stable compounds among which 21 are predicted as non-metallic. Among these 21 compositions, 4 could be considered as new semiconductors.
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The discoveries of intrinsically magnetic topological materials, including semimetals with a large anomalous Hall effect and axion insulators, have directed fundamental research in solid-state materials. Topological quantum chemistry has enabled the understanding of and the search for paramagnetic topological materials. Using magnetic topological indices obtained from magnetic topological quantum chemistry (MTQC), here we perform a high-throughput search for magnetic topological materials based on first-principles calculations. We use as our starting point the Magnetic Materials Database on the Bilbao Crystallographic Server, which contains more than 549 magnetic compounds with magnetic structures deduced from neutron-scattering experiments, and identify 130 enforced semimetals (for which the band crossings are implied by symmetry eigenvalues), and topological insulators. For each compound, we perform complete electronic structure calculations, which include complete topological phase diagrams using different values of the Hubbard potential. Using a custom code to find the magnetic co-representations of all bands in all magnetic space groups, we generate data to be fed into the algorithm of MTQC to determine the topology of each magnetic material. Several of these materials display previously unknown topological phases, including symmetry-indicated magnetic semimetals, three-dimensional anomalous Hall insulators and higher-order magnetic semimetals. We analyse topological trends in the materials under varying interactions: 60 per cent of the 130 topological materials have topologies sensitive to interactions, and the others have stable topologies under varying interactions. We provide a materials database for future experimental studies and open-source code for diagnosing topologies of magnetic materials.
The high-throughput (HT) computational method is a useful tool to screen high performance functional materials. In this work, using the deformation potential method under the single band model, we evaluate the carrier relaxation time and establish an electrical descriptor (c{hi}) characterized by the carrier effective masses based on the simple rigid band approximation. The descriptor (c{hi}) can be used to reasonably represent the maximum power factor without solving the electron Boltzmann transport equation. Additionally, the Gruneisen parameter ({gamma}), a descriptor of the lattice anharmonicity and lattice thermal conductivity, is efficiently evaluated using the elastic properties, omitting the costly phonon calculations. Applying two descriptors (c{hi} and {gamma}) to binary chalcogenides, we HT compute 243 semiconductors and screen 50 promising thermoelectric materials. For these theoretically determined compounds, we successfully predict some previously experimentally and theoretically investigated promising thermoelectric materials. Additionally, 9 p-type and 14 n-type previously unreported binary chalcogenides are also predicted as promising thermoelectric materials. Our work provides not only new thermoelectric candidates with perfect crystalline structure for the future investigations, but also reliable descriptors to HT screen high performance thermoelectric materials.
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic structure calculations of the intrinsic SHC for over 20,000 non-magnetic crystals. The calculations reveal a strong and unexpected relation of the magnitude of the SHC with the crystalline symmetry, which we show exists because large SHC is typically associated with mirror symmetry protected nodal lines in the band structure. From the new developed database, we identify new promising materials. This includes eleven materials with a SHC comparable or even larger than that the up to now record Pt as well as materials with different types of spin currents, which could allow for new types of spin-obitronics devices.
Reducing parameter spaces via exploiting symmetries has greatly accelerated and increased the quality of electronic-structure calculations. Unfortunately, many of the traditional methods fail when the global crystal symmetry is broken, even when the distortion is only a slight perturbation (e.g. Jahn-Teller like distortions). Here we introduce a flexible and generalizable parametric relaxation scheme, and implement it in the all-electron code FHI-aims. This approach utilizes parametric constraints to maintain symmetry at any level. After demonstrating the methods ability to relax metastable structures, we highlight its adaptability and performance over a test set of 359 materials, across thirteen lattice prototypes. Finally we show how these constraints can reduce the number of steps needed to relax local lattice distortions by an order of magnitude. The flexibility of these constraints enables a significant acceleration of the high-throughput searches for novel materials for numerous applications.
Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of ~0.9 at 323 K and ~1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.
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