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Register a new userInterfacial charge density and its connection to adhesion and frictional forces
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We derive a connection between the intrinsic tribological properties and the electronic properties of a solid interface. In particular, we show that the adhesion and frictional forces are dictated by the electronic charge redistribution occurring due to the relative displacements of the two surfaces in contact. We define a figure of merit to quantify such charge redistribution and show that simple functional relations hold for a wide series of interactions including metallic, covalent and physical bonds. This suggests unconventional ways of measuring friction by recording the evolution of the interfacial electronic charge during sliding. Finally, we explain that the key mechanism to reduce adhesive friction is to inhibit the charge flow at the interface and provide examples of this mechanism in common lubricant additives.
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Frictional interfaces are abundant in natural and engineering systems, and predicting their behavior still poses challenges of prime scientific and technological importance. At the heart of these challenges lies the inherent coupling between the interfacial constitutive relation -- the macroscopic friction law -- and the bulk elasticity of the bodies that form the frictional interface. In this feature paper, we discuss the generic properties of the macroscopic friction law and the many ways in which its coupling to bulk elasticity gives rise to rich spatiotemporal frictional dynamics. We first present the widely used rate-and-state friction constitutive framework, discuss its power and limitations, and propose extensions that are supported by experimental data. We then discuss how bulk elasticity couples different parts of the interface, and how the range and nature of this interaction are affected by the systems geometry. Finally, in light of the coupling between interfacial and bulk physics, we discuss basic phenomena in spatially-extended frictional systems, including the stability of homogeneous sliding, the onset of sliding motion and a wide variety of propagating frictional modes (e.g. rupture fronts, healing fronts and slip pulses). Overall, the results presented and discussed in this feature paper highlight the inseparable roles played by interfacial and bulk physics in spatially-extended frictional systems.
At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin splitting at the Fermi level by spin pumping or spin torque ferromagnetic resonance. Here, we report evidence of significant photoinduced spin to charge conversion via Rashba spin splitting in an unoccupied state above the Fermi level at the Cu(111)/$alpha$-Bi$_{2}$O$_{3}$ interface. We predict an average Rashba coefficient of $1.72times 10^{-10}eV.m$ at 1.98 eV above the Fermi level, by fully relativistic first-principles analysis of the interfacial electronic structure with spin orbit interaction. We find agreement with our observation of helicity dependent photoinduced spin to charge conversion excited at 1.96 eV at room temperature, with spin current generation of $J_{s}=10^{6}A/m^{2}$. The present letter shows evidence of efficient spin-charge conversion exploiting Rashba spin splitting at excited states, harvesting light energy without magnetic materials or external magnetic fields.
In orbital-free density functional theory the kinetic potential (KP), the functional derivative of the kinetic energy density functional, appears in the Euler equation for the electron density and may be more amenable to simple approximations. We study properties of two solid-state systems, Al and Si, using two nonlocal KPs that gave good results for atoms. Very accurate results are found for Al, but results for Si are much less satisfactory, illustrating the general need for a better treatment of extended covalent systems. A different integration pathway in the KP formalism may prove useful in attacking this fundamental problem.
How magnetism emerges in low-dimensional materials such as transition metal dichalcogenides at the monolayer limit is still an open question. Herein, we present a comprehensive study of the magnetic properties of single crystal and monolayer VSe$_{2}$, both experimentally and emph{ab initio}. Magnetometry, X-ray magnetic circular dichrosim (XMCD) and emph{ab initio} calculations demonstrate that the charge density wave in bulk stoichiometric VSe$_{2.0}$ causes a structural distortion with a strong reduction in the density of sates at the Fermi level, prompting the system towards a non-magnetic state but on the verge of a ferromagnetic instability. In the monolayer limit, the structural rearrangement induces a Peierls distortion with the opening of an energy gap at the Fermi level and the absence of magnetic order. Control experiments on defect-induced VSe$_{2-delta}$ single crystals show a breakdown of magnetism, discarding vacancies as a possible origin of magnetic order in VSe$_{2}$.
We study spin motive forces, i.e, spin-dependent forces, and voltages induced by time-dependent magnetization textures, for moving magnetic vortices and domain walls. First, we consider the voltage generated by a one-dimensional field-driven domain wall. Next, we perform detailed calculations on field-driven vortex domain walls. We find that the results for the voltage as a function of magnetic field differ between the one-dimensional and vortex domain wall. For the experimentally relevant case of a vortex domain wall, the dependence of voltage on field around Walker breakdown depends qualitatively on the ratio of the so-called $beta$-parameter to the Gilbert damping constant, and thus provides a way to determine this ratio experimentally. We also consider vortices on a magnetic disk in the presence of an AC magnetic field. In this case, the phase difference between field and voltage on the edge is determined by the $beta$ parameter, providing another experimental method to determine this quantity.
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