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Register a new userVoltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction
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Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of ten or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.
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When two superconductors are connected across a ferromagnet, the spin configuration of the transferred Cooper pairs can be modulated due to magnetic exchange interaction. The resulting supercurrent can reverse its sign across the Josephson junction (JJ) [1-4]. Here we demonstrate Josephson phase modulation in van der Waals heterostructures when Cooper pairs from superconducting NbSe$_2$ tunnel through atomically thin magnetic insulator (MI) Cr$_2$Ge$_2$Te$_6$. Employing a superconducting quantum interference device based on MI JJs, we probe a doubly degenerate non-trivial JJ phase ($phi$) originating from the magnetic barrier. This $phi$-phase JJ is formed by momentum conserving tunneling of Ising Cooper pairs [5] across magnetic domains in the Cr$_2$Ge$_2$Te$_6$ barrier. The doubly degenerate ground states in MI JJs provide a two-level quantum system that can be utilized as a new disipationless component for superconducting quantum devices, including phase batteries [6], memories [7,8], and quantum Ratchets [9,10].
The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics with spontaneous time-reversal symmetry breaking. Here, we report spin photovoltaic effects in vdW heterostructures of atomically thin magnet chromium triiodide (CrI3) sandwiched by graphene contacts. In the absence of a magnetic field, the photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization-resolved absorption measurements reveal that these observations originate from magnetic-order-coupled and thus helicity-dependent charge-transfer exciton states. The photocurrent displays multiple plateaus as the magnetic field is swept, which are associated with different spin configurations enabled by the layered antiferromagnetism and spin-flip transitions in CrI3. Remarkably, giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photo-spintronics by engineering magnetic vdW heterostructures.
We report on Andreev reflections at clean NbSe2-bilayer graphene junctions. The high transparency of the junction, which manifests as a large conductance enhancement of up to 1.8, enables us to see clear evidence of a proximity-induced superconducting gap in bilayer graphene and two Andreev reflections through a vertical NbSe2-graphene and a lateral graphene-graphene junction respectively. Quantum transport simulations capture the complexity of the experimental data and illuminate the impact of various microscopic parameters on the transmission of the junction. Our work establishes the practice and understanding of an all-van-der-Waals, high-performance superconducting junction. The realization of a highly transparent proximized graphene-graphene junction opens up possibilities to engineer emergent quantum phenomena.
The van der Waals heterostructures are a fertile frontier for discovering emergent phenomena in condensed matter systems. They are constructed by stacking elements of a large library of two-dimensional materials, which couple together through van der Waals interactions. However, the number of possible combinations within this library is staggering, and fully exploring their potential is a daunting task. Here we introduce van der Waals metamaterials to rapidly prototype and screen their quantum counterparts. These layered metamaterials are designed to reshape the flow of ultrasound to mimic electron motion. In particular, we show how to construct analogues of all stacking configurations of bilayer and trilayer graphene through the use of interlayer membranes that emulate van der Waals interactions. By changing the membranes density and thickness, we reach coupling regimes far beyond that of conventional graphene. We anticipate that van der Waals metamaterials will explore, extend, and inform future electronic devices. Equally, they allow the transfer of useful electronic behavior to acoustic systems, such as flat bands in magic-angle twisted bilayer graphene, which may aid the development of super-resolution ultrasound imagers.
Spin-polarized quasiparticles can be easily created during spin-filtering through a ferromagnetic insulator (FI) in contact with a superconductor due to pair breaking effects at the interface. A combination FI-N-FI sandwiched between two superconductors can be used to create and analyze such spin-polarized quasiparticles through their nonequilibrium accumulation in the middle metallic (N) layer. We report spin-polarized quasiparticle regulation in a double spin-filter tunnel junction in the configuration NbN-GdN1-Ti-GdN2-NbN. The middle Ti layer provides magnetic decoupling between two ferromagnetic GdN and a place for nonequilibrium quasiparticle accumulation. The two GdN(1,2) layers were deposited under different conditions to introduce coercive contrast. The quasiparticle tunneling spectra has been measured at different temperatures to understand the tunneling mechanism in these double spin-filter junctions. The conductance spectra were found to be comparable to an asymmetric SINIS-type tunnel junction. A hysteretic R-H loop with higher resistance for the antiparallel configuration compared to parallel state was observed asserting the spin-polarized nature of quasiparticles. The hysteresis in the R-H loop was found to disappear for sub-gap bias current. This difference can be understood by considering suppression of the interlayer coupling due to nonequilibrium spin-polarized quasiparticle accumulation in the Ti layer.
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