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Register a new userHighly-efficient spintronic terahertz emitter enabled by metal-dielectric photonic crystal
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Spintronic terahertz (THz) emitter provides the advantages such as apparently broader spectrum, significantly lower cost, and more flexibility in compared with the commercial THz emitters, and thus attracts great interests recently. In past few years, efforts have been made in optimizing the material composition and structure geometry, and the conversion efficiency has been improved close to that of ZnTe crystal. One of the drawbacks of the current designs is the rather limited laser absorption - more than 50% energy is wasted and the conversion efficiency is thus limited. Here, we theoretically propose and experimentally demonstrate a novel device that fully utilizes the laser intensity and significantly improves the conversion efficiency. The device, which consists of a metal-dielectric photonic crystal structure, utilizes the interference between the multiple scattering waves to simultaneously suppress the reflection and transmission of the laser, and to reshape the laser field distributions. The experimentally detected laser absorption and THz generations show one-to-one correspondence with the theoretical calculations. We achieve the strongest THz pulse emission that presents a 1.7 times improvement compared to the currently designed spintronic emitter. This work opens a new pathway to improve the performance of spintronic THz emitter from the perspective of optics.
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Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rather long wavelengths of THz radiation. In this context, phonon polaritons - light coupled to lattice vibrations - in van der Waals (vdW) crystals have emerged as a promising solution for controlling light beyond the diffraction limit, as they feature extreme field confinements and low optical losses. However, experimental demonstration of nanoscale-confined phonon polaritons at THz frequencies has so far remained elusive. Here, we provide it by employing scattering-type scanning near-field optical microscopy (s-SNOM) combined with a free-electron laser (FEL) to reveal a range of low-loss polaritonic excitations at frequencies from 8 to 12 THz in the vdW semiconductor ${alpha}-MoO_3$. We visualize THz polaritons with i) in-plane hyperbolic dispersion, ii) extreme nanoscale field confinement (below ${lambda}_o/75$) and iii) long polariton lifetimes, with a lower limit of > 2 ps.
We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.
Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 $mu$m. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to $<$15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics.
Terahertz electromagnetic radiation is extremely useful for numerous applications such as imaging and spectroscopy. Therefore, it is highly desirable to have an efficient table-top emitter covering the 1-to-30-THz window whilst being driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emission spectra with substantial gaps. Here, we take advantage of the electron spin to realize a conceptually new terahertz source which relies on tailored fundamental spintronic and photonic phenomena in magnetic metal multilayers: ultrafast photo-induced spin currents, the inverse spin-Hall effect and a broadband Fabry-Perot resonance. Guided by an analytical model, such spintronic route offers unique possibilities for systematic optimization. We find that a 5.8-nm-thick W/CoFeB/Pt trilayer generates ultrashort pulses fully covering the 1-to-30-THz range. Our novel source outperforms laser-oscillator-driven emitters such as ZnTe(110) crystals in terms of bandwidth, terahertz-field amplitude, flexibility, scalability and cost.
Colloidal probe Atomic Force Microscopy (AFM) allows to explore sliding states of vanishing friction, i.e. superlubricity, in mesoscopic graphite contacts. In this respect, superlubricity is known to appear upon formation of a triboinduced transfer layer, originated by material transfer of graphene flakes from the graphitic substrate to the colloidal probe. It was suggested that friction vanishes due to crystalline incommensurability at the sliding interface thus formed. However several details are missing, including the roles of tribolayer roughness and of loading conditions. Hereafter we gain deeper insight into the tribological response of micrometric silica beads sliding on graphite under ambient conditions. We show that the tribotransferred flakes increase interfacial roughness from tenths to several nanometers, in fact causing a breakdown of adhesion and friction by one order of magnitude. Furthermore, they behave as protruding asperities dissipating mechanical energy via atomic-scale stick-slip instabilities. Remarkably, such contact junctions can undergo a load-driven transition from continuous superlubric sliding to dissipative stick-slip, that agrees with the single-asperity Prandtl-Tomlinson model. Our results indicate that friction at mesoscopic silica-graphite junctions depends on the specific energy landscape experienced by the topographically-highest triboinduced nanoasperity. Superlubricity may arise from the load-controlled competition between interfacial crystalline incommensurability and contact pinning effects.
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