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We have studied U_3Si_2 by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (gamma_el ~ 150 mJ/mol-K2) and shows an upturn in Cp/T (T), characteristic of spin fluctuations. The thermal conductivity of U3Si2 is ~8.5 W/m-K at room temperature and we show that the electronic part dominates heat transport above 300 K as expected for a metallic system, although the lattice contribution cannot be completely neglected.
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We have investigated the effect of Cd substitution on the archetypal heavy fermion antiferromagnet CeIn$_3$ via magnetic susceptibility, specific heat and resistivity measurements. The suppression of the Neel temperature, T$_{N}$, with Cd doping is more pronounced than with Sn. Nevertheless, a doping induced quantum critical point does not appear to be achievable in this system. The magnetic entropy at $T_N$ and the temperature of the maximum in resistivity are also systematically suppressed with Cd, while the effective moment and the Curie-Weiss temperature in the paramagnetic state are not affected. These results suggest that Cd locally disrupts the AFM order on its neighboring Ce moments, without affecting the valence of Ce. Moreover, the temperature dependence of the specific heat below $T_N$ is not consistent with 3D magnons in pure as well as in Cd-doped CeIn$_3$, a point that has been missed in previous investigations of CeIn$_3$ and that has bearing on the type of quantum criticality in this system.
The trigonal compound EuMg2Bi2 has recently been discussed in terms of its topological band properties. These are intertwined with its magnetic properties. Here detailed studies of the magnetic, thermal, and electronic transport properties of EuMg2Bi2 single crystals are presented. The Eu{+2} spins-7/2 in EuMg2Bi2 exhibit an antiferromagnetic (AFM) transition at a temperature TN = 6.7 K, as previously reported. By analyzing the anisotropic magnetic susceptibility chi data below TN in terms of molecular-field theory (MFT), the AFM structure is inferred to be a c-axis helix, where the ordered moments in the hexagonal ab-plane layers are aligned ferromagnetically in the ab plane with a turn angle between the moments in adjacent moment planes along the c axis of about 120 deg. The magnetic heat capacity exhibits a lambda anomaly at TN with evidence of dynamic short-range magnetic fluctuations both above and below TN. The high-T limit of the magnetic entropy is close to the theoretical value for spins-7/2. The in-plane electrical resistivity rho(T) data indicate metallic character with a mild and disorder-sensitive upturn below Tmin = 23 K. An anomalous rapid drop in rho(T) on cooling below TN as found in zero field is replaced by a two-step decrease in magnetic fields. The rho(T) measurements also reveal an additional transition below TN in applied fields of unknown origin that is not observed in the other measurements and may be associated with an incommensurate to commensurate AFM transition. The dependence of TN on the c-axis magnetic field Hperp was derived from the field-dependent chi(T), Cp(T), and rho(T) measurements. This TN(Hperp) was found to be consistent with the prediction of MFT for a c-axis helix with S = 7/2 and was used to generate a phase diagram in the Hperp-T plane.
We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolute value of S increases monotonically to 243 uV/K with increasing temperature up to 550 K. The large S may originate from the low carrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of 62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggests a crossover of dominant scattering mechanism from ionized impurity to acoustic phonon scattering with increasing temperature. The existence of local vibration modes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysis of experimental data of structural refinement and specific heat, which give an Einstein temperature of 50 K and a Debye temperature of 200 K. This local vibration of Ba atoms should be responsible for the low thermal conductivity (1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds for thermoelectric application is discussed.
Magnetization, heat capacity, electrical resistivity, thermoelectric power, and Hall effect have been investigated on single-crystalline Ce_2PdSi_3. This compound is shown to order antiferromagnetically below Neel temperature (T_N) ~3 K. The Sommerfeld coefficient far below T_N is found to be about 110 mJ/K^2 mol Ce, which indicates the heavy-fermion character of this compound. The transport and magnetic properties exhibit large anisotropy with an interplay between crystalline-electric-field (CEF) and Kondo effects. The sign of thermoelectric power is opposite for different directions at high temperatures and the ordinary Hall coefficient is anisotropic with opposite sign for different geometries, indicating the anisotropic Fermi surface. The CEF analysis from the temperature dependence of magnetic susceptibility suggests that the ground state is |+/-1/2>. The first and the second excited CEF doublet levels are found to be located at about 30 and 130 K, respectively. The Kondo temperature is estimated to be the same order as T_N, indicating the presence of a delicate competition between the Kondo effect and magnetic order.
We report electrical and thermal transport properties of polycrystalline ZrTe3. The polycrystalline sample shows semiconducting behavior in contrast to the established semi-metallic character of the compound. However the charge density wave (CDW) transition remains intact and its clear signatures are observed in thermal conductivity and Seebeck coefficient, in the wide temperature range 50 - 100 K. The thermal conductivity points to additional scattering from the low frequency phonons (phonon softening) in the vicinity of CDW transition. The transport in the polycrystalline compounds is governed by smaller size polarons in the variable range hopping (VRH) region. However, the increasing disorder in polycrystalline compounds suppresses the CDW transition. The VRH behavior is also observed in the Seebeck coefficient data in the similar temperature range. The Seebeck coefficient suggests a competition between the charge carriers (electrons and hole).
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