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Register a new userHigh quality cobalt ferrite ultrathin films with large inversion parameter grown in epitaxy on Ag(001)
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Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. The epitaxial orientation, the surface, interface and film structure were resolved combining LEED, STM, Auger and in situ GIXRD. A slight tetragonal distortion was observed, that should drive the easy magnetization axis in plane due to the large magneto-elastic coupling of such a material. The so-called inversion parameter, i.e. the Co fraction occupying octahedral sites in the ferrite spinel structure, is a key element for its spin-dependent electronic gap. It was obtained through in-situ x-ray resonant diffraction measurements collected at both the Co and Fe K edges. The data analysis was performed using the FDMNES code and showed that Co ions are predominantly located at octahedral sites with an inversion parameter of 0.88 +- 0.05. Ex-situ XPS gave an estimation in accordance with the values obtained through diffraction analysis.
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Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe2.
The phase immiscibility and the excellent matching between Ag(001) and Fe(001) unit cells (mismatch 0.8 %) make Fe/Ag growth attractive in the field of low dimensionality magnetic systems. Intermixing could be drastically limited at deposition temperatures as low as 140-150 K. The film structural evolution induced by post-growth annealing presents many interesting aspects involving activated atomic exchange processes and affecting magnetic properties. Previous experiments, of He and low energy ion scattering on films deposited at 150 K, indicated the formation of a segregated Ag layer upon annealing at 550 K. Higher temperatures led to the embedding of Fe into the Ag matrix. In those experiments, information on sub-surface layers was attained by techniques mainly sensitive to the topmost layer. Here, systematic PED measurements, providing chemical selectivity and structural information for a depth of several layers, have been accompanied with a few XRD rod scans, yielding a better sensitivity to the buried interface and to the film long range order. The results of this paper allow a comparison with recent models enlightening the dissolution paths of an ultra thin metal film into a different metal, when both subsurface migration of the deposit and phase separation between substrate and deposit are favoured. The occurrence of a surfactant-like stage, in which a single layer of Ag covers the Fe film is demonstrated for films of 4-6 ML heated at 500-550 K. Evidence of a stage characterized by the formation of two Ag capping layers is also reported. As the annealing temperature was increased beyond 700 K, the surface layers closely resembled the structure of bare Ag(001) with the residual presence of subsurface Fe aggregates.
We investigate on-site Coulomb interaction energy between two 3p holes U(Ni 3p) of ultrathin NiO films on Ag(001) by both x-ray photoelectron spectroscopy and Auger electron spectroscopy. As the film becomes thin, U(Ni 3p) monotonically decreases, and the difference of U(Ni 3p) for 1 monolayer (ML) film from that of bulk-like thick film delta U(Ni 3p) reaches ~ -2.2 eV. The observed delta U(Ni 3p) for 1 ML film is well reproduced by the differences of both the image potential and polarization energies between 1 ML film and the bulk-like thick film. Hence, the present results provide an evidence for the picture originally proposed by Duffy et al. [J. Phys. C: Solid State Phys., 16, 4087 (1983)] and Altieri et al. [Phys. Rev. B 59, R2517 (1999)]
Graphene is attractive for spintronics due to its long spin life time and high mobility. So far only thick and polycrystalline slabs have been used as ferromagnetic electrodes. We report the growth of flat, epitaxial ultrathin Co films on graphene. These display perpendicular magnetic anisotropy in the thickness range 0.5-1nm, which is confirmed by theory. PMA, epitaxy and ultrathin thickness bring new perspectives for graphene-based spintronic devices such as the zero-field control of an arbitrary magnetization direction, band matching between electrodes and graphene, and interface effects such as Rashba and electric field control of magnetism.
We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depends on that of their substrates, with in-plane epitaxial relationships of Bi2Te3 [2 1 -3 0] || Si [1 -1 0] and Bi2Te3 [0 1 -1 0] || Si [1 1 -2] along which the lattices of 1x3 Bi2Te3 and 2x2 Si supercells are well matched. As the samples age, we observe loss of crystalline Bi2Te3 film thickness accompanied with roughening of the crystalline interfaces, formation of new crystalline phases as well as compositional and structural modification of the Si substrate, consistent with the diffusion of Te into the Si substrate.
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