Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userObservation of second-order topological insulators in sonic crystals
156
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Topological insulators with unique gapless edge states have revolutionized the understanding of electronic properties in solid materials. These gapless edge states are dictated by the topological invariants associated with the quantization of generalized Berry phases of the bulk energy bands through the bulk-edge correspondence, a paradigm that can also be extended to acoustic and photonic systems. Recently, high-order topological insulators (HOTIs) are proposed and observed, where the bulk topological invariants result in gapped edge states and in-gap corner or hinge states, going beyond the conventional bulk-edge correspondence. However, the existing studies on HOTIs are restricted to tight-binding models which cannot describe the energy bands of conventional sonic/photonic crystals that are due to multiple Bragg scatterings. Here, we report theoretical prediction and experimental observation of acoustic second-order topological insulators (SOTI) in two-dimensional (2D) sonic crystals (SCs) beyond the tight-binding picture. We observe gapped edge states and degenerate in-gap corner states which manifest bulk-edge correspondence in a hierarchy of dimensions. Moreover, topological transitions in both the bulk and edge states can be realized by tuning the angle of the meta-atoms in each unit-cell, leading to various conversion among bulk, edge and corner states. The emergent properties of the acoustic SOTIs open up a new route for topological designs of robust localized acoustic modes as well as topological transfer of acoustic energy between 2D, 1D and 0D modes.
rate research
Read More
Valley pseudospin, labeling quantum states of energy extrema in momentum space, is attracting tremendous attention1-13 because of its potential in constructing new carrier of information. Compared with the non-topological bulk valley transport realized soon after predictions1-5, the topological valley transport in domain walls6-13 is extremely challenging owing to the inter-valley scattering inevitably induced by atomic scale imperfectness, until the recent electronic signature observed in bilayer graphene12,13. Here we report the first experimental observation of topological valley transport of sound in sonic crystals. The macroscopic nature of sonic crystals permits the flexible and accurate design of domain walls. In addition to a direct visualization of the valley-selective edge modes through spatial scanning of sound field, reflection immunity is observed in sharply curved interfaces. The topologically protected interface transport of sound, strikingly different from that in traditional sound waveguides14,15, may serve as the basis of designing devices with unconventional functions.
We demonstrate, both theoretically and experimentally, the concept of non-linear second-order topological insulators, a class of bulk insulators with quantized Wannier centers and a bulk polarization directly controlled by the level of non-linearity. We show that one-dimensional edge states and zero-dimensional corner states can be induced in a trivial crystal insulator made of evanescently coupled resonators with linear and nonlinear coupling coefficients, simply by tuning the excitation intensity. This allows global external control over topological phase transitions and switching to a phase with non-zero bulk polarization, without requiring any structural or geometrical changes. We further show how these non-linear effects enable dynamic tuning of the spectral properties and localization of the topological edge and corner states. Such self-induced second-order topological insulators, which can be found and implemented in a wide variety of physical platforms ranging from electronics to microwaves, acoustics, and optics, hold exciting promises for reconfigurable topological energy confinement, power harvesting, data storage, and spatial management of high-intensity fields.
Recently, the topological physics in artificial crystals for classical waves has become an emerging research area. In this Letter, we propose a unique bilayer design of sonic crystals that are constructed by two layers of coupled hexagonal array of triangular scatterers. Assisted by the additional layer degree of freedom, a rich topological phase diagram is achieved by simply rotating scatterers in both layers. Under a unified theoretical framework, two kinds of valley-projected topological acoustic insulators are distinguished analytically, i.e., the layer-mixed and layer-polarized topological valley Hall phases, respectively. The theory is evidently confirmed by our numerical and experimental observations of the nontrivial edge states that propagate along the interfaces separating different topological phases. Various applications such as sound communications in integrated devices, can be anticipated by the intriguing acoustic edge states enriched by the layer information.
The discovery of quadrupole topology opens a new horizon in the study of topological phenomena. However, the existing experimental realizations of quadrupole topological insulators in symmorphic lattices with $pi$-fluxes often break the protective mirror symmetry. Here, we present a theory for anomalous quadrupole topological insulators in nonsymmorphic crystals without flux, using 2D sonic crystals with $p4gm$ and $p2gg$ symmetry groups as concrete examples. We reveal that the anomalous quadrupole topology is protected by two orthogonal glide symmetries in square or rectangular lattices. The distinctive features of the anomalous quadrupole topological insulators include: (i) minimal four bands below the topological band gap, (ii) nondegenerate, gapped Wannier bands and special Wannier sectors with gapped composite Wannier bands, (iii) quantized Wannier band polarizations in these Wannier sectors. Remarkably, the protective glide symmetries are well-preserved in the sonic-crystal realizations where higher-order topological transitions can be triggered by symmetry or geometry engineering.
Recently, a new family of symmetry-protected higher-order topological insulators has been proposed and was shown to host lower-dimensional boundary states. However, with the existence of the strong disorder in the bulk, the crystal symmetry is broken, and the associated corner states are disappeared. It is well known that the emergence of robust edge states and quantized transport can be induced by adding sufficient disorders into a topologically trivial insulator, that is the so-called topological Anderson insulator. The question is whether disorders can also cause the higher-order topological phase. This is not known so far, because interactions between disorders and the higher-order topological phases are completely different from those with the first-order topological system. Here, we demonstrate theoretically that the disorderinduced higher-order topological corner state and quantized fraction corner charge can appear in a modified Haldane model. In experiments, we construct the classical analog of such higherorder topological Anderson insulators using electric circuits and observe the disorder-induced corner state through the voltage measurement. Our work defies the conventional view that the disorder is detrimental to the higher-order topological phase, and offers a feasible platform to investigate the interaction between disorders and higher-order topological phases.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
