No Arabic abstract
We propose a novel type of magnetic scanning probe sensor, based on a single planar Josephson junction with a magnetic barrier. The planar geometry together with high magnetic permeability of the barrier helps to focus flux in the junction and thus enhance the sensitivity of the sensor. As a result, it may outperform equally sized SQUID both in terms of the magnetic field sensitivity and the spatial resolution in one scanning direction. We fabricate and analyze experimentally sensor prototypes with a superparamagnetic CuNi and a ferromagnetic Ni barrier. We demonstrate that the planar geometry allows easy miniaturization to nm-scale, facilitates an effective utilization of the self-field phenomenon for amplification of sensitivity and a simple implementation of a control line for feed-back operation in a broad dynamic range.
Since the discovery of superconductivity in MgB2 considerable progress has been made in determining the physical properties of the material, which are promising for bulk conductors. Tunneling studies show that the material is reasonably isotropic and has a well-developed s-wave energy gap (∆), implying that electronic devices based on MgB2 could operate close to 30K. Although a number of groups have reported the formation of thin films by post-reaction of precursors, heterostructure growth is likely to require considerable technological development, making single-layer device structures of most immediate interest. MgB2 is unlike the cuprate superconductors in that grain boundaries do not form good Josephson junctions, and although a SQUID based on MgB2 nanobridges has been fabricated, the nanobridges themselves do not show junction-like properties. Here we report the successful creation of planar MgB2 junctions by localised ion damage in thin films. The critical current (IC) of these devices is strongly modulated by applied microwave radiation and magnetic field. The product of the critical current and normal state resistance (ICRN) is remarkably high, implying a potential for very high frequency applications.
We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Vanishings of the critical current correspond to transitions into pi-state and back into conventional 0-state. The experimental data allow to extract the superconducting order parameter oscillation period and the pair decay length in the ferromagnet. We develope a theoretical approach based on Usadel equations, which takes into account the spin-flip scattering. Results of numerical calculations are in good agreement with the experimental data.
We study theoretically the effects of interfacial Rashba and Dresselhaus spin-orbit coupling in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions---with allowing for tunneling barriers between the layers---by solving the Bogoljubov-de Gennes equation for a realistic heterostructure and applying the Furusaki-Tsukada technique to calculate the electric current at a finite temperature. The presence of spin-orbit couplings leads to out- and in-plane magnetoanisotropies of the Josephson current, which are giant in comparison to current magnetoanisotropies in similar normal-state ferromagnet/normal metal (F/N) junctions. Especially huge anisotropies appear in the vicinity of $ 0 $-$ pi $ transitions, caused by the exchange-split bands in the ferromagnetic metal layer. We also show that the direction of the Josephson critical current can be controlled (inducing $ 0 $-$ pi $ transitions) by the strength of the spin-orbit coupling and, more crucial, by the orientation of the magnetization. Such a control can bring new functionalities into Josephson junction devices.
Andreev reflection (AR) in ferromagnet/superconductor junctions is an indispensable spectroscopic tool for measuring spin polarization. We study theoretically how the presence of a thin semiconducting interface in such junctions, inducing Rashba and Dresselhaus spin-orbit coupling, modifies AR processes. The interface gives rise to an effective momentum- and spin-dependent scattering potential, making the probability of AR strongly asymmetric with respect to the sign of the incident electrons transverse momenta. This skew AR creates spatial charge carrier imbalances and transverse Hall currents flow in the ferromagnet. We show that the effect is giant, as compared to the normal regime. We provide a quantitative analysis and a qualitative picture of this phenomenon, and finally show that skew AR also leads to a widely tunable transverse supercurrent response in the superconductor.
Measurements of the differential conductance spectra of YBa2Cu3O7-SrRuO3 and YBa2Cu3O7-La0.67Ca_0.33MnO3 ramp-type junctions along the node and anti-node directions are reported. The results are consistent with a crossed Andreev reflection effect only in YBa2Cu3O7-SrRuO3 junctions where the domain wall width of SrRuO3 is comparable with the coherence length of YBa2Cu3O7. No such effect was observed in the YBa2Cu3O7-La0.67Ca0.33MnO3 junctions, which is in line with the much larger (x10) domain wall width of La0.67Ca0.33MnO3. We also show that crossed Andreev exists only in the anti-node direction. Furthermore, we find evidence that crossed Andreev in YBa2Cu3O7 junctions is not sensitive to nm-scale interface defects, suggesting that the length scale of the crossed Andreev effect is larger than the coherence length, but still smaller than the La0.67Ca0.33MnO3s domain wall width.