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Register a new userStrain-induced tuning of the electronic Coulomb interaction in 3d transition metal oxide perovskites
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Epitaxial strain offers an effective route to tune the physical parameters in transition metal oxides. So far, most studies have focused on the effects of strain on the bandwidths and crystal field splitting, but recent experimental and theoretical works have shown that also the effective Coulomb interaction changes upon structural modifications. This effect is expected to be of paramount importance in current material engineering studies based on epitaxy-based material synthesization. Here, we perform constrained random phase approximation calculations for prototypical oxides with a different occupation of the d shell, LaTiO3 (d1), LaVO3 (d2), and LaCrO3 (d3), and systematically study the evolution of the effective Coulomb interactions (Hubbard U and Hunds J) when applying epitaxial strain. Surprisingly, we find that the response upon strain is strongly dependent on the material. For LaTiO3, the interaction parameters are determined by the degree of localization of the orbitals, and grow with increasing tensile strain. In contrast, LaCrO3 shows the opposite trends: the interactions parameters shrink upon tensile strain. This is caused by the enhanced screening due to the larger electron filling. LaVO3 shows an intermediate behavior.
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We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_{alpha}$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_{alpha} = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
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Recently, the celebrated Keldysh potential has been widely used to describe the Coulomb interaction of few-body complexes in monolayer transition-metal dichalcogenides. Using this potential to model charged excitons (trions), one finds a strong dependence of the binding energy on whether the monolayer is suspended in air, supported on SiO$_2$, or encapsulated in hexagonal boron-nitride. However, empirical values of the trion binding energies show weak dependence on the monolayer configuration. This deficiency indicates that the description of the Coulomb potential is still lacking in this important class of materials. We address this problem and derive a new potential form, which takes into account the three atomic sheets that compose a monolayer of transition-metal dichalcogenides. The new potential self-consistently supports (i) the non-hydrogenic Rydberg series of neutral excitons, and (ii) the weak dependence of the trion binding energy on the environment. Furthermore, we identify an important trion-lattice coupling due to the phonon cloud in the vicinity of charged complexes. Neutral excitons, on the other hand, have weaker coupling to the lattice due to the confluence of their charge neutrality and small Bohr radius.
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