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Register a new userOn optical-absorption peaks in a nonhomogeneous thin-film solar cell with a two-dimensional periodically corrugated metallic backreflector
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The rigorous coupled wave approach (RCWA) was implemented to investigate optical absorption in a triple-p-i-n-junction amorphous-silicon solar cell with a 2D metallic periodically corrugated backreflector (PCBR). Both total and useful absorptances were computed against the free-space wavelength $lambda_o$ for both s- and p-polarized polarization states. The useful absorptance in each of the three p-i-n junctions was also computed for normal as well as oblique incidence. Furthermore, two canonical boundary-value problems were solved for the prediction of guided-wave modes (GWMs): surface-plasmon-polariton waves and waveguide modes. Use of the doubly periodic PCBR enhanced both useful and total absorptances in comparison to a planar backreflector. The predicted GWMs were correlated with the peaks of the total and useful absorptances. The excitation of GWMs was mostly confined to $lambda_o < 700$ nm and enhanced absorption. As excitation of certain GWMs could be correlated with the total absorptance but not with the useful absorptance, the useful absorptance should be studied while devising light-trapping strategies.
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Power-conversion efficiency is a critical factor for the wider adoption of solar-cell modules. Thin-film solar cells are cheap and easy to manufacture, but their efficiencies are low compared to crystalline-silicon solar cells and need to be improved. A thin-film solar cell with two absorber layers (instead of only one), with bandgap energy graded in both, can capture solar photons in a wider spectral range. With a 300-nm-thick CIGS~absorber layer and an 870-nm-thick CZTSSe~absorber layer, an efficiency of $34.45%$ is predicted by a detailed optoelectronic model, provided that the grading of bandgap energy is optimal in both absorber layers.
An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap {is predicted to enhance} the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
This work introduces a new software package `Sesame for the numerical computation of classical semiconductor equations. It supports 1 and 2-dimensional systems and provides tools to easily implement extended defects such as grain boundaries or sample surfaces. Sesame has been designed to facilitate fast exploration of the system parameter space and to visualize local charge transport properties. Sesame is distributed as a Python package or as a standalone GUI application, and is available at https://pages.nist.gov/sesame/ .
A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the CZTSSe layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.
The existence of cross-over resonances makes saturated-absorption spectra very complicated when external magnetic field B is applied. It is demonstrated for the first time that the use of micrometric-thin cells (MTC, $Lapprox40,mu$m) allows application of SA for quantitative studies of frequency splittings and shifts of the Rb atomic transitions in a wide range of external magnetic fields, from 0.2 up to 6 kG (20-600 mT). We compare the SA spectra obtained with the MTC with those obtained with other techniques, and present applications for optical magnetometry with micrometer spatial resolution and a broadly tunable optical frequency reference.
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