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Register a new userStrong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface
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Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.
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Electronic states on the Bi/InAs(110)-(2$times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($alpha_{rm R}$) reached quite a large value ($sim$5.5 eVAA). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices.
We report on magnetic resonance studies within the magnetically ordered phase of the quasi-1D antiferromagnet LiCuVO_4. Our studies reveal a spin reorientational transition at a magnetic field H_c1 ~ 25 kOe applied within the crystallographical (ab)-plane in addition to the recently observed one at H_c2 ~75 kOe [ M.G. Banks et al., cond-mat/0608554 (2006)]. Spectra of the antiferromagnetic resonance (AFMR) along low-frequency branches can be described in the frame of a macroscopic theory of exchange-rigid planar magnetic structures. These data allow to obtain the anisotropy of the exchange interaction together with a constant of the uniaxial anisotropy. Spectra of 7Li nuclear magnetic resonance (NMR) show that, within the magnetically ordered phase of LiCuVO_4 in the low-field range H < H_c1, a planar spiral spin structure is realized with the spins lying in the (ab)-plane in agreement with neutron scattering studies of B.J. Gibson et al. [Physica B Vol. 350, 253 (2004)]. Based on NMR spectra simulations, the transition at H_c1 can well be described as a spin-flop transition, where the spin plane of the magnetically ordered structure rotates to be perpendicular to the direction of the applied magnetic field. For H > H_c2 ~ 75 kOe, our NMR spectra simulations show that the magnetically ordered structure exhibits a modulation of the spin projections along the direction of the applied magnetic field H.
We report on NMR studies of the quasi one--dimensional (1D) antiferromagnetic $S=1/2$ chain cuprate LiCuVO$_4$ in magnetic fields $H$ up to $mu_0H$ = 30 T ($approx 70$% of the saturation field $H_{rm sat}$). NMR spectra in fields higher than $H_{rm c2}$ ($mu_0H_{rm c2} approx 7.5$ T) and temperatures $T<T_{rm N}$ can be described within the model of a spin-modulated phase in which the magnetic moments are aligned parallel to the applied field $H$ and their values alternate sinusoidally along the magnetic chains. Based on theoretical concepts about magnetically frustrated 1D chains, the field dependence of the modulation strength of the magnetic structure is deduced from our experiments. Relaxation time $T_2$ measurements of the $^{51}$V nuclei show that $T_2$ depends on the particular position of the probing $^{51}$V nucleus with respect to the magnetic copper moments within the 1D chains: the largest $T_2$ value is observed for the vanadium nuclei which are very next to the magnetic Cu$^{2+}$ ion with largest ordered magnetic moment. This observation is in agreement with the expectation for the spin-modulated magnetic structure. The $(H,T)$ magnetic phase diagram of LiCuVO$_4$ is discussed.
In this work we derive a new scheme to calculate Tomonaga-Luttinger liquid (TLL) parameters and holon (charge modes) velocities in a quasi-1D material that consists of two-leg ladders coupled through Coulomb interactions. Firstly, we obtain an analytic formula for electron-electron interaction potential along the conducting axis for a generalized charge distribution in a plane perpendicular to it. In the second step we introduce many-body screening that is present in a quasi-1D material. To this end we propose a new approximation for the charge susceptibility. Based on this we are able to find the TLLs parameters and velocities. We then show how to use these to validate the experimental ARPES data measured recently in p-polarization in $NbSe_3$. Although we focus our study on this specific material it is applicable for any quasi-1D system that consists of two-leg ladders as basic units.
The interaction between magnetic impurities and the gapless surface state is of critical importance for realizing novel quantum phenomena and new functionalities in topological insulators. By combining angle-resolved photoemission spectroscopic experiments with density functional theory calculations, we show that surface deposition of Cr atoms on Bi$_2$Se$_3$ does not lead to gap opening of the surface state at the Dirac point, indicating the absence of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping, and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.
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