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Register a new userInsights on unconventional superconductivity in HfV$_2$Ga$_4$ and ScV$_2$Ga$_4$ from first principles electronic structure calculations
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The HfV$_2$Ga$_4$ compound was recently reported to exhibit unusual bulk superconducting properties, with the possibility of multiband behavior. To gain insight into its properties, we performed ab-initio electronic structure calculations based on the Density Functional Theory (DFT). Our results show that the density of states at the Fermi energy is mainly composed by V--$d$ states. The McMillan formula predicts a superconducting critical temperature ($T_{c}$) of approximately $3.9,$K, in excellent agreement with the experimental value at $4.1,$K, indicating that superconductivity in this new compound may be explained by the electron-phonon mechanism. Calculated valence charge density maps clearly show directional bonding between Hf and V atoms with 1D highly populated V-chains, and some ionic character between Hf--Ga and V--Ga bonds. Finally, we have shown that there are electrons occupying two distinct bands at the Fermi level, with different characters, which supports experimental indications of possible multiband superconductivity. Based on the results, we propose the study of a related compound, ScV$_2$Ga$_4$, showing that it has similar electronic properties, but probably with a higher $T_c$ than HfV$_2$Ga$_4$.
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In this letter, we have examined the superconducting ground state of the HfV$_2$Ga$_4$ compound using resistivity, magnetization, zero-field (ZF) and transverse-field (TF) muon-spin relaxation and rotation ($mu$SR) measurements. Resistivity and magnetization unveil the onset of bulk superconductivity with $T_{bf c}sim$ 3.9~K, while TF-$mu$SR measurements show that the temperature dependence of the superfluid density is well described by a nodal two-gap $s$+$d$-wave order parameter model. In addition, ZF muon relaxation rate increases with decreasing temperature below 4.6 K, indicating the presence of weak spin fluctuations. These observations suggest an unconventional multiband nature of the superconductivity possibly arising from the distinct $d$-bands of V and Hf ions with spin fluctuations playing an important role. To better understand these findings, we carry out first-principles electronic-structure calculations, further highlighting that the Fermi surface consists of multiple disconnected sheets with very different orbital weights and spin-orbit coupling, bridging the way for a nodal multiband superconductivity scenario. In this vein, therefore, HfV$_2$Ga$_4$-family stands out as an open avenue to novel unexplored unconventional superconducting compounds, such as ScV$_2$Ga$_4$ and ZrV$_2$Ga$_4$, and other many rare earths based materials.
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The Cu$_2$BaSnS$_4$ (CBTS) and Cu$_2$SrSnS$_4$ (CSTS) semiconductors have been recently proposed as potential wide band gap photovoltaic absorbers. Although several measurements indicate that they are less affected by band tailing than their parent compound Cu$_2$ZnSnS$_4$, their photovoltaic efficiencies are still low. To identify possible issues, we characterize CBTS and CSTS in parallel by a variety of spectroscopic methods complemented by first-principles calculations. Two main problems are identified in both materials. The first is the existence of deep defect transitions in low-temperature photoluminescence, pointing to a high density of bulk recombination centers. The second is a low electron affinity, which emphasizes the need for an alternative heterojunction partner and electron contact. We also find a tendency for downward band bending at the surface of both materials. In CBTS, this effect is sufficiently large to cause carrier type inversion, which may enhance carrier separation and mitigate interface recombination. Optical absorption at room temperature is exciton-enhanced in both CBTS and CSTS. Deconvolution of excitonic effects yields band gaps that are about 100 meV higher than previous estimates based on Tauc plots. Although the two investigated materials are remarkably similar in an idealized, defect-free picture, the present work points to CBTS as a more promising absorber than CSTS for tandem photovoltaics.
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