Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSingle photon detection with SiPMs irradiated up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence
56
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor tolerance to radiation. At room temperature the large increase in dark count rate makes single photon detection practically impossible already at 10$^{11}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence. The neutron fluences foreseen by many subdetectors to be operated at the high luminosity LHC range up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent. In this paper we present the effects of such high neutron fluences on Hamamatsu and SensL SiPMs of different cell size. The advantage of annealing at high temperature (up to 175 $^{circ}$C) is discussed. We demonstrate that, after annealing, operation at the single photon level with a SiPM irradiated up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence is possible at cryogenic temperature (77 K) with a dark count rate below 1~kHz.
rate research
Read More
Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to $Phi_{neq}$ = 5$times$10$^{14}$ cm$^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30$^circ$C and $+$30$^circ$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light.
A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2cdot10^{15}$, eqcm{} are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50--60),$mu$m.
Micromegas detectors are an optimum technological choice for the detection of low energy x-rays. The low background techniques applied to these detectors yielded remarkable background reductions over the years, being the CAST experiment beneficiary of these developments. In this document we report on the latest upgrades towards further background reductions and better understanding of the detectors response. The upgrades encompass the readout electronics, a new detector design and the implementation of a more efficient cosmic muon veto system. Background levels below 10$^{-6}$keV$^{-1}$cm$^{-2}$s$^{-1}$ have been obtained at sea level for the first time, demonstrating the feasibility of the expectations posed by IAXO, the next generation axion helioscope. Some results obtained with a set of measurements conducted in the x-ray beam of the CAST Detector Laboratory will be also presented and discussed.
We developed superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide (WSi) that show saturated internal detection efficiency up to a wavelength of 10 um. These detectors are promising for applications in the mid-infrared requiring ultra-high gain stability, low dark counts, and high efficiency such as chemical sensing, LIDAR, dark matter searches and exoplanet spectroscopy.
We report results from the testing of 35 {mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {mu}m thick UFSD produced by HPK. The 35 {mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {mu}m thick UFSD in timing accuracy, bias voltage and power can be established.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
