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Register a new userNeutron irradiation effect on SiPMs up to $Phi_{neq}$ = 5 $times$ 10$^{14}$ cm$^{-2}$
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Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to $Phi_{neq}$ = 5$times$10$^{14}$ cm$^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30$^circ$C and $+$30$^circ$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light.
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Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor tolerance to radiation. At room temperature the large increase in dark count rate makes single photon detection practically impossible already at 10$^{11}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence. The neutron fluences foreseen by many subdetectors to be operated at the high luminosity LHC range up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent. In this paper we present the effects of such high neutron fluences on Hamamatsu and SensL SiPMs of different cell size. The advantage of annealing at high temperature (up to 175 $^{circ}$C) is discussed. We demonstrate that, after annealing, operation at the single photon level with a SiPM irradiated up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence is possible at cryogenic temperature (77 K) with a dark count rate below 1~kHz.
We report results from the testing of 35 {mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {mu}m thick UFSD produced by HPK. The 35 {mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {mu}m thick UFSD in timing accuracy, bias voltage and power can be established.
Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about $1times$$10^{16}$neq cm$^{-2}$ (1MeV equivalent neutrons). All presented results are part of the CMS R&D activities in view of the pixel detector upgrade for the High Luminosity phase of the LHC at CERN (HL-LHC). A preliminary analysis of the collected data shows hit detection efficiencies around 97% measured after proton irradiation.
The properties of 60-{mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.
This paper presents the possibility of using very thin Low Gain Avalanche Diodes (LGAD) ($25 - 50mu$m thick) as tracking detector at future hadron colliders, where particle fluence will be above $10^{16}; n_{eq}/cm^2$. In the present design, silicon sensors at the High-Luminosity LHC will be 100- 200 $mu$m thick, generating, before irradiation, signals of 1-2 fC. This contribution shows how very thin LGAD can provide signals of the same magnitude via the interplay of gain in the gain layer and gain in the bulk up to fluences above $10^{16}; n_{eq}/cm^2$: up to fluences of 0.1-0.3$cdot 10^{16}; n_{eq}/cm^2$, thin LGADs maintain a gain of $sim$ 5-10 while at higher fluences the increased bias voltage will trigger the onset of multiplication in the bulk, providing the same gain as previously obtained in the gain layer. Key to this idea is the possibility of a reliable, high-density LGAD design able to hold large bias voltages ($sim$ 500V).
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