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Register a new userEfficient Electrical Detection of Mid-Infrared Graphene Plasmons at Room Temperature
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Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into a measurable electrical signal at room temperature can enable important mid-infrared applications such as thermal sensing and imaging in ubiquitous mobile devices. However, as appealing as this goal might be, it is still unrealized due to the modest thermoelectric coefficient and weak temperature-dependence of carrier transport in graphene. Here, we demonstrate mid-infrared graphene detectors consisting of arrays of plasmonic resonators interconnected by quasi one-dimensional nanoribbons. Localized barriers associated with disorder in the nanoribbons produce a dramatic temperature dependence of carrier transport, thus enabling the electrical detection of plasmon decay in the nearby graphene resonators. We further realize a device with a subwavelength footprint of 5*5 um2 operating at 12.2 um, an external responsivity of 16 mA/W, a low noise-equivalent power of 1.3 nW/Hz1/2 at room temperature, and an operational frequency potentially beyond gigahertz. Importantly, our device is fabricated using large-scale graphene and possesses a simple two-terminal geometry, representing an essential step toward the realization of on-chip graphene mid-infrared detector arrays.
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Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and damping, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced damping is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared.
Plasmons --the collective oscillations of electrons in conducting materials-- play a pivotal role in nanophotonics because of their ability to couple electronic and photonic degrees of freedom. In particular, plasmons in graphene --the atomically thin carbon material-- offer strong spatial confinement and long lifetimes, accompanied by extraordinary optoelectronic properties derived from its peculiar electronic band structure. Understandably, this material has generated great expectations for its application to enhanced integrated devices. However, an efficient scheme for detecting graphene plasmons remains a challenge. Here we show that extremely compact graphene nanostructures are capable of realizing on-chip electrical detection of single plasmons. Specifically, we predict a twofold increase in the electrical current across a graphene nanostructure junction caused by the excitation of a single plasmon. This effect, which is due to the increase in electron temperature following plasmon decay, should persist during a picosecond time interval characteristic of electron-gas relaxation. We further show that a broad spectral detection range is accessible either by electrically doping the junction or by varying the size of the nanostructure. The proposed graphene plasmometer could find application as a basic component of future optics-free integrated nanoplasmonic devices.
The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The observed Fermi-level dependence rules out Planckian light emission mechanisms and is consistent with the calculated plasmon emission spectra in photoinverted graphene. Evidence for bright hot plasmon emission is further supported by Fermi-level-dependent and polarization-dependent resonant emission from graphene plasmonic nanoribbon arrays under pulsed laser excitation. Spontaneous plasmon emission is a bright emission process as our calculations for our experimental conditions indicate that the spectral flux of spontaneously generated plasmons is several orders of magnitude higher than blackbody emission at a temperature of several thousand Kelvin. In this work, it is shown that a large enhancement in radiation efficiency of graphene plasmons can be achieved by decorating graphene surface with gold nanodisks, which serve as out-coupling scatterers and promote localized plasmon excitation when they are resonant with the incoming excitation light. These observations set a framework for exploration of ultrafast and ultrabright mid-infrared emission processes and light sources.
To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The magnetic state of matter, assembled by ordering the electrons quantum spin property, represents a sizeable source of built-in energy. We propose to create a direct source of electrical power at room temperature (RT) by utilizing magnetic energy to harvest thermal fluctuations on paramagnetic (PM) centers. Our spin engine rectifies current fluctuations across the PM centers spin states according to the electron spin by utilizing so-called spinterfaces with high spin polarization. As a rare experimental event, we demonstrate how this path can generate 0.1nW at room temperature across a 20 micron-wide spintronic device called the magnetic tunnel junction, assembled using commonplace Co, C and MgO materials. The presence of this path in our experiment, which also generates very high spintronic performance, is confirmed by analytical and ab-initio calculations. Device downscaling, and the ability for other materials systems than the spinterface to select a transport spin channel at RT widens opportunities for routine device reproduction. The challenging control over PM centers within the tunnel barriers nanotransport path may be addressed using oxide- and organic-based nanojunctions. At present densities in MRAM products, this spin engine could lead to always-on areal power densities well beyond that generated by solar irradiation on earth. Further developing this concept can fundamentally alter our energy-driven societys global economic, social and geopolitical constructs.
We propose a two-dimensional plasmonic platform - periodically patterned monolayer graphene - which hosts topological one-way edge states operable up to infrared frequencies. We classify the band topology of this plasmonic system under time-reversal-symmetry breaking induced by a static magnetic field. At finite doping, the system supports topologically nontrivial bandgaps with mid-gap frequencies up to tens of terahertz. By the bulk-edge correspondence, these bandgaps host topologically protected one-way edge plasmons, which are immune to backscattering from structural defects and subject only to intrinsic material and radiation loss. Our findings reveal a promising approach to engineer topologically robust chiral plasmonic devices and demonstrate a realistic example of high-frequency topological edge state.
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