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Register a new userElectric field control of spins in molecular magnets
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Coherent control of individual molecular spins in nano-devices is a pivotal prerequisite for fulfilling the potential promised by molecular spintronics. By applying electric field pulses during time-resolved electron spin resonance measurements, we measure the sensitivity of the spin in several antiferromagnetic molecular nanomagnets to external electric fields. We find a linear electric field dependence of the spin states in Cr$_7$Mn, an antiferromagnetic ring with a ground-state spin of $S=1$, and in a frustrated Cu$_3$ triangle, both with coefficients of about $2~mathrm{rad}, mathrm{s}^{-1} / mathrm{V} mathrm{m}^{-1}$. Conversely, the antiferromagnetic ring Cr$_7$Ni, isomorphic with Cr$_7$Mn but with $S=1/2$, does not exhibit a detectable effect. We propose that the spin-electric field coupling may be used for selectively controlling individual molecules embedded in nanodevices.
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Detailed investigation of the incommensurate magnetic ordering in a single crystal of multiferroic NdMn2O5 has been performed using both non-polarized and polarized neutron diffraction techniques. Below TN = 30.5 K magnetic Bragg reflections corresponding to the non-chiral type magnetic structure with propagation vector k1 = (0.5 0 kz1) occurs. Below about 27 K a new distorted magnetic modulation with a similar vector kz2 occurs, which is attributed to the magnetization of the Nd3+ ions by the Mn-sub-lattice. Strong temperature hysteresis in the occurrence of the incommensurate magnetic phases in NdMn2O5 was observed depending on the cooling or heating history of the sample. Below about 20 K the magnetic structure became of a chiral type. From spherical neutron polarimetry measurements, the resulting low-temperature magnetic structure kz3 was approximated by the general elliptic helix. The parameters of the magnetic helix-like ellipticity and helical plane orientation in regard to the crystal structure were determined. A reorientation of the helix occurs at an intermediate temperature between 4 K and 18 K. A difference between the population of right- and left-handed chiral domains of about 0.2 was observed in the as-grown crystal when cooling without an external electric field. The magnetic chiral ratio can be changed by the application of an external electric field of a few kV/cm, revealing strong magnetoelectric coupling. A linear dependence of the magnetic chirality on the applied electric field in NdMn2O5 was found. The results are discussed within the frame of the antisymmetric super-exchange model for Dzyaloshinsky-Moria interaction.
All-electrical control of a dynamic magnetoelectric effect is demonstrated in a classical multiferroic manganite DyMnO3, a material containing coupled antiferromagnetic and ferroelectric orders. Due to intrinsic magnetoelectric coupling with electromagnons a linearly polarized terahertz light rotates upon passing through the sample. The amplitude and the direction of the polarization rotation are defined by the orientation of ferroelectric domains and can be switched by static voltage. These experiments allow the terahertz polarization to be tuned using the dynamic magnetoelectric effect.
The information accessible from a muon-spin relaxation experiment is often limited since we lack knowledge of the precise muon stopping site. We demonstrate here the possibility of localizing a spin polarized muon in a known stopping state in a molecular material containing fluorine. The muon-spin precession that results from the entangled nature of the muon-spin and surrounding nuclear spins is sensitive to the nature of the stopping site and we use this property to identify three classes of site. We are also able to describe the extent to which the muon distorts its surroundings.
The coupling of magnetic chiralities to the ferroelectric polarisation in multiferroic RbFe(MoO$_4$)$_2$ is investigated by neutron spherical polarimetry. Because of the axiality of the crystal structure below $T_textrm{c}$ = 190 K, helicity and triangular chirality are symmetric-exchange coupled, explaining the onset of the ferroelectricity in this proper-screw magnetic structure - a mechanism that can be generalised to other systems with ferroaxial distortions in the crystal structure. With an applied electric field we demonstrate control of the chiralities in both structural domains simultaneously.
We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.
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