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Register a new userQuantum thermodynamics of nanoscale thermoelectrics and electronic devices
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Added by
Janine Splettstoesser
Publication date
2018
fields
Physics
and research's language is
English
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This mini-review is intended as a short introduction to electron flow in nanostructures. Its aim is to provide a brief overview of this topic for people who are interested in the thermodynamics of quantum systems but know little about nanostructures. We particularly emphasize devices that work in the steady-state, such as simple thermoelectrics, but also mention cyclically driven heat engines. We do not aim to be either complete or rigorous, but use a few pages to outline some of the main ideas in the topic.
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We consider the nonlinear scattering theory for three-terminal thermoelectric devices, used for power generation or refrigeration. Such systems are quantum phase-cohere
We aim to provide engineers with an introduction to the non-equilibrium Greens function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomistically. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices are between diffusive and phase coherent. We introduce the non equilbrium Greens function (NEGF) approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of layered structures such as nanotransistors, carbon nanotubes and nanowires. An application of the NEGF method in the ballistic and scattering limits to silicon nanotransistors is discussed.
Quantum control of individual spins in condensed matter systems is an emerging field with wide-ranging applications in spintronics, quantum computation, and sensitive magnetometry. Recent experiments have demonstrated the ability to address and manipulate single electron spins through either optical or electrical techniques. However, it is a challenge to extend individual spin control to nanoscale multi-electron systems, as individual spins are often irresolvable with existing methods. Here we demonstrate that coherent individual spin control can be achieved with few-nm resolution for proximal electron spins by performing single-spin magnetic resonance imaging (MRI), which is realized via a scanning magnetic field gradient that is both strong enough to achieve nanometric spatial resolution and sufficiently stable for coherent spin manipulations. We apply this scanning field-gradient MRI technique to electronic spins in nitrogen-vacancy (NV) centers in diamond and achieve nanometric resolution in imaging, characterization, and manipulation of individual spins. For NV centers, our results in individual spin control demonstrate an improvement of nearly two orders of magnitude in spatial resolution compared to conventional optical diffraction-limited techniques. This scanning-field-gradient microscope enables a wide range of applications including materials characterization, spin entanglement, and nanoscale magnetometry.
Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here we build on a recent proposal to construct superconducting devices such as wires, Josephson junctions, and qubits inside and out-of single crystal silicon or germanium. Using atomistic fabrication techniques such as STM hydrogen lithography, heavily-doped superconducting regions within a single crystal could be constructed. We describe the characteristic parameters of basic superconducting elements---a 1D wire and a tunneling Josephson junction---and estimate the values for boron-doped silicon. The epitaxial, single-crystal nature of these devices, along with the extreme flexibility in device design down to the single-atom scale, may enable lower-noise or new types of devices and physics. We consider applications for such super-silicon devices, showing that the state-of-the-art transmon qubit and the sought-after phase-slip qubit can both be realized. The latter qubit leverages the natural high kinetic inductance of these materials. Building on this, we explore how kinetic inductance based particle detectors (e.g., photon or phonon) could be realized with potential application in astronomy or nanomechanics. We discuss super-semi devices (such as in silicon, germanium, or diamond) which would not require atomistic fabrication approaches and could be realized today.
We report the optical detection of magnons with a broad range of wavevectors in magnetic insulator Y3Fe5O12 thin films by proximate nitrogen-vacancy (NV) single-spin sensors. Through multi-magnon scattering processes, the excited magnons generate fluctuating magnetic fields at the NV electron spin resonance frequencies, which accelerate the relaxation of NV spins. By measuring the variation of the emitted spin-dependent photoluminescence of the NV centers, magnons with variable wavevectors up to ~ 5 x 10^7 m-1 can be optically accessed, providing an alternative perspective to reveal the underlying spin behaviors in magnetic systems. Our results highlight the significant opportunities offered by NV single-spin quantum sensors in exploring nanoscale spin dynamics of emergent spintronic materials.
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