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Register a new userBlack Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy
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Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between within the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Herein, we report a rare chemical form of arsenic, called black-arsenic (b-As), as an extremely anisotropic layered semiconductor. We have performed systematic characterization on the structural, electronic, thermal and electrical properties of b-As single crystals, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). Our analysis shows that b-As exhibits higher or comparable electronic, thermal and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies are able to potentially implement novel ideas for scientific research and device applications.
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Two-dimensional (2D) materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here we report the discovery of ferromagnetism in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine-iodine van der Waals gap. It has a BiI3-type structure (R-3, No.148) at room temperature, and our experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical band gap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.
We demonstrate that chiral skyrmionic magnetization configurations can be found as the minimum energy state in B20 thin film materials with easy-plane magnetocrystalline anisotropy with an applied magnetic field perpendicular to the film plane. Our observations contradict results from prior analytical work, but are compatible with recent experimental investigations. The size of the observed skyrmions increases with the easy-plane magnetocrystalline anisotropy. We use a full micromagnetic model including demagnetization and a three-dimensional geometry to find local energy minimum (metastable) magnetization configurations using numerical damped time integration. We explore the phase space of the system and start simulations from a variety of initial magnetization configurations to present a systematic overview of anisotropy and magnetic field parameters for which skyrmions are metastable and global energy minimum (stable) states.
The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls--Nabarro model with material-specific parametrization derived from first principles. The plasticity of InSe turns out to be attributed to peculiarities of the generalized stacking fault relief for the interlayer dislocation slips such as existence of the stacking fault with a very low energy and low energy barriers. Our results give a consistent microscopic explanation of recently observed [Science {bf 369}, 542 (2020)] exceptional plasticity of InSe.
Transition metal dichalcogenides (TMD) possess novel properties which makes them potential candidates for various spintronic applications. Heterostructures of TMD with magnetic thin film have been extensively considered for spin-orbital torque, enhancement of perpendicular magnetic anisotropy etc. However, the effect of TMD on magnetic anisotropy in heterostructures of in-plane magnetization has not been studied so far. Further the effect of the TMD on the domain structure and magnetization reversal of the ferromagnetic system is another important aspect to be understood. In this context we study the effect of MoS2, a well-studied TMD material, on magnetic properties of CoFeB in MoS2/CoFeB heterostructures. The reference CoFeB film possess a weak in-plane anisotropy. However, when the CoFeB is deposited on MoS2 the in-plane anisotropy is enhanced as observed from magneto optic Kerr effect (MOKE) microscopy as well as ferromagnetic resonance (FMR). Magnetic domain structure and magnetization reversal have also been significantly modified for the MoS2/CoFeB bilayer as compared to the reference CoFeB layer. Frequency and angle dependent FMR measurement show that the magnetic anisotropy of CoFeB increases with increase in thickness of MoS2 in the MoS2/CoFeB heterostructures.
Two-dimensional (2D) ferromagnets have recently drawn extensive attention, and here we study the electronic structure and magnetic properties of the bulk and monolayer of CrSBr, using first-principles calculations and Monte Carlo simulations. Our results show that bulk CrSBr is a magnetic semiconductor and has the easy magnetization b-axis, hard c-axis, and intermediate a-axis. Thus, the experimental triaxial magnetic anisotropy (MA) is well reproduced here, and it is identified to be the joint effects of spin-orbit coupling (SOC) and magnetic dipole-dipole interaction. We find that bulk CrSBr has a strong ferromagnetic (FM) intralayer coupling but a marginal interlayer one. We also study CrSBr monolayer in detail and find that the intralayer FM exchange persists and the shape anisotropy has a more pronounced contribution to the MA. Using the parameters of the FM exchange and the triaxial MA, our Monte Carlo simulations show that CrSBr monolayer has Curie temperature Tc = 175 K. Moreover, we find that a uniaxial tensile (compressive) strain along the a (b) axis would further increase the Tc.
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