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High Performance Metal-Insulator-Graphene Diodes for Radio Frequency Power Detection Application

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 Added by Zhenxing Wang
 Publication date 2018
  fields Physics
and research's language is English




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Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A/cm^2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V^{-1}, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V/W at 2.4 GHz and 1.1 V/W at 49.4 GHz.



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Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene-silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene-based diodes have the potential to outperform conventional photodetectors in several key figures-of-merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application-specific ways.
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Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction area reduces the junction capacitance and enables operation in the D-band (110 - 170 GHz). The rectenna on polyimide shows a maximum voltage responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/$sqrt{text{Hz}}$.
85 - Z Chen 2019
Radio-frequency (RF) contacts-which are an example of electrical contacts-are commonly employed on accelerators and nuclear fusion experimental devices. RF contacts with a current load of 2 kA for steady-state operation were designed for application to the International Thermonuclear Experimental Reactor (ITER) device. In contrast to the typical working conditions of general commercial electrical contacts, those of RF contacts employed on fusion devices include high vacuum, high temperature, and neutron radiation. CuCrZr is currently of interest as a base material for the manufacture of louvers of RF contacts, which has excellent thermal and electrical properties and has low creep rate at 250 {textdegree}C. In this study, a hard Au coating (Au-Ni) was electroplated on CuCrZr samples and the samples were then subjected to thermal aging treatment at 250 {textdegree}C for 500 h in order to simulate the vacuum-commissioning process of the ITER. The effects of thermal aging on the hardness, elastic modulus, crystallite size, and compositions of the coating were investigated via microstructural and mechanical characterizations of the coating material. Metal atom migration in different coating layers during thermal aging was characterized and evaluated via scanning electron microscopy/energy dispersive X-ray spectroscopy observations of the cross-sectional surfaces, and the obtained results could be used to directly select the coating thickness for the final RF contact component. The contact resistance-an important parameter of the RF contact-was measured in a dedicated testbed built to simulate fusion reactor conditions between CuCrZr pins and stainless steel plates coated with Au-Ni and Rh, respectively.
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