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Register a new userTrivial topological phase of CaAgP and the topological nodal-line transition in CaAg(P1-xAsx)
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By performing angle-resolved photoemission spectroscopy and first-principles calculations, we address the topological phase of CaAgP and investigate the topological phase transition in CaAg(P1-xAsx). We reveal that in CaAgP, the bulk band gap and surface states with a large bandwidth are topologically trivial, in agreement with hybrid density functional theory calculations. The calculations also indicate that application of negative hydrostatic pressure can transform trivial semiconducting CaAgP into an ideal topological nodal-line semimetal phase. The topological transition can be realized by partial isovalent P/As substitution at x = 0.38.
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The realization of Dirac and Weyl physics in solids has made topological materials one of the main focuses of condensed matter physics. Recently, the topic of topological nodal line semimetals, materials in which Dirac or Weyl-like crossings along special lines in momentum space create either a closed ring or line of degeneracies, rather than discrete points, has become a hot topic in topological quantum matter. Here we review the experimentally confirmed and theoretically predicted topological nodal line semimetals, focusing in particular on the symmetry protection mechanisms of the nodal lines in various materials. Three different mechanisms: a combination of inversion and time-reversal symmetry, mirror reflection symmetry, and non-symmorphic symmetry, and their robustness under the effect of spin orbit coupling are discussed. We also present a new Weyl nodal line material, the Te-square net compound KCu$_2$EuTe$_4$, which has several Weyl nodal lines including one extremely close to the Fermi level ($<$30 meV below E$_F$). Finally, we discuss potential experimental signatures for observing exotic properties of nodal line physics.
ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of linear dispersion of up to 2 eV. We have carried out a series of high pressure electrical resistivity measurements on single crystals of ZrSiS. Shubnikov-de Haas measurements show two distinct oscillation frequencies. For the smaller orbit, we observe a change in the phase of 0.5, which occurs between 0.16 - 0.5 GPa. This change in phase is accompanied by an abrupt decrease of the cross-sectional area of this Fermi surface. We attribute this change in phase to a possible topological quantum phase transition. The phase of the larger orbit exhibits a Berry phase of pi and remains roughly constant up to 2.3 GPa. Resistivity measurements to higher pressures show no evidence for pressure-induced superconductivity to at least 20 GPa.
Owing to the natural compatibility with current semiconductor industry, silicon allotropes with diverse structural and electronic properties provide promising platforms for the next-generation Si-based devices. After screening 230 all-silicon crystals in the zeolite frameworks by first-principles calculations, we disclose two structurally stable Si allotropes (AHT-Si24 and VFI-Si36) containing open channels as topological node-line semimetals with Dirac nodal points forming a nodal loop in the kz=0 plane of Brillouin zone. Interestingly, their nodal loops protected by inversion and time-reversal symmetries are robust against SU(2) symmetry breaking due to very weak spin-orbit coupling of Si. When the nodal lines are projected onto the (001) surface, flat surface bands can be observed because of the nontrivial topology of the bulk band structures. Our discoveries extend the topological physics to the three-dimensional Si materials, highlighting the possibility to realize low-cost, nontoxic and semiconductor-compatible Si-based electronics with topological quantum states.
The optical properties of YbMnSb2 have been measured in a broad frequency range from room temperature down to 7 K. With decreasing temperature, a flat region develops in the optical conductivity spectra at about 300cm-1, which can not be described by the well-known Drude-Lorentz model. A frequency-independent component has to be introduced to model the measured optical conductivity. Our first-principles calculations show that YbMnSb2 possesses a Dirac nodal line near the Fermi level. A comparison between the measured optical properties and calculated electronic band structures suggests that the frequency-independent optical conductivity component arises from interband transitions near the Dirac nodal line, thus demonstrating that YbMnSb2 is a Dirac nodal line semimetal.
A first-order-like resistivity hysteresis is induced by a subtle structural transition under hydrostatic pressure in the topological nodal-line superconductor PbTaSe$_2$. This structure transition is quickly suppressed to zero at pressure $sim$0.25 GPa. As a result, superconductivity shows a marked suppression, accompanied with fundamental changes in the magnetoresistance and Hall resistivity, suggesting a Lifshitz transition around $sim$0.25 GPa. The first principles calculations show that the spin-orbit interactions partially gap out the Dirac nodal line around $K$ point in the Brillouin zone upon applying a small pressure, whilst the Dirac states around $H$ point are completely destroyed. The calculations further reveal a second structural phase transition under a pressure as high as $sim$30 GPa, through which a transition from a topologically nontrivial phase to a trivial phase is uncovered, with a superconducting dome emerging under this high-pressure phase.
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