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Observation of a well-defined hybridization gap and in-gap states on the SmB6 (001) surface

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 Added by Zhixiang Sun
 Publication date 2018
  fields Physics
and research's language is English




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The rise of topology in condensed matter physics has generated strong interest in identifying novel quantum materials in which topological protection is driven by electronic correlations. Samarium hexaboride is a Kondo insulator for which it has been proposed that a band inversion between $5d$ and $4f$ bands gives rise to topologically protected surface states. However, unambiguous proof of the existence and topological nature of these surface states is still missing, and its low-energy electronic structure is still not fully established. Here we present a study of samarium hexaboride by ultra-low-temperature scanning tunneling microscopy and spectroscopy. We obtain clear atomically resolved topographic images of the sample surface. Our tunneling spectra reveal signatures of a hybridization gap with a size of about $8 mathrm{meV}$ and with a reduction of the differential conductance inside the gap by almost half, and surprisingly, several strong resonances below the Fermi level. The spatial variations of the energy of the resonances point towards a microscopic variation of the electronic states by the different surface terminations. High-resolution tunneling spectra acquired at $100 mathrm{mK}$ reveal a splitting of the Kondo resonance, possibly due to the crystal electric field.



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We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Gamma$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Gamma$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Gamma$ point.
Topological insulators host spin-polarized surface states which robustly span the band gap and hold promise for novel applications. Recent theoretical predictions have suggested that topologically protected surface states may similarly span the hybridization gap in some strongly correlated heavy fermion materials, particularly SmB6. However, the process by which the Sm 4f electrons hybridize with the 5d electrons on the surface of SmB6, and the expected Fermi-level gap in the density of states out of which the predicted topological surface states must arise, have not been directly measured. We use scanning tunneling microscopy to conduct the first atomic resolution spectroscopic study of the cleaved surface of SmB6, and to reveal a robust hybridization gap which universally spans the Fermi level on four distinct surface morphologies despite shifts in the f band energy. Using a cotunneling model, we separate the density of states of the hybridized bands from which the predicted topological surface states must be disentangled. On all surfaces we observe residual spectral weight spanning the hybridization gap down to the lowest T, which is consistent with a topological surface state.
The nature of the second order phase transition that occurs in URu2Si2 at 17.5 K remains puzzling despite intensive research over the past two and half decades. A key question emerging in the field is whether a hybridization gap between the renormalized bands can be identified as the long-sought hidden order parameter. We report on the measurement of a hybridization gap in URu2Si2 employing a spectroscopic technique based on quasiparticle scattering across a ballistic metallic junction. The differential conductance exhibits an asymmetric double-peak structure, a clear signature for a Fano resonance in a Kondo lattice. The extracted hybridization gap opens well above the transition temperature, indicating that it is not the hidden order parameter. Our results put stringent constraints on the origin of the hidden order transition in URu2Si2 and demonstrate that quasiparticle scattering spectroscopy can probe the band renormalizations in a Kondo lattice via detection of a novel type of Fano resonance.
365 - F. Chen , C. Shang , Z. Jin 2013
Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario.
Taken together and viewed holistically, recent theory, low temperature (T) transport, photoelectron spectroscopy and quantum oscillation experiments have built a very strong case that the paradigmatic mixed valence insulator SmB6 is currently unique as a three-dimensional strongly correlated topological insulator (TI). As such, its many-body T-dependent bulk gap brings an extra richness to the physics beyond that of the weakly correlated TI materials. How will the robust, symmetry-protected TI surface states evolve as the gap closes with increasing T? For SmB6 exploiting this opportunity first requires resolution of other important gap-related issues, its origin, its magnitude, its T-dependence and its role in bulk transport. In this paper we report detailed T-dependent angle resolved photoemission spectroscopy (ARPES) measurements that answer all these questions in a unified way.
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