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Register a new userTemperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6
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Added by
Jonathan D. Denlinger
Publication date
2013
fields
Physics
and research's language is
English
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Taken together and viewed holistically, recent theory, low temperature (T) transport, photoelectron spectroscopy and quantum oscillation experiments have built a very strong case that the paradigmatic mixed valence insulator SmB6 is currently unique as a three-dimensional strongly correlated topological insulator (TI). As such, its many-body T-dependent bulk gap brings an extra richness to the physics beyond that of the weakly correlated TI materials. How will the robust, symmetry-protected TI surface states evolve as the gap closes with increasing T? For SmB6 exploiting this opportunity first requires resolution of other important gap-related issues, its origin, its magnitude, its T-dependence and its role in bulk transport. In this paper we report detailed T-dependent angle resolved photoemission spectroscopy (ARPES) measurements that answer all these questions in a unified way.
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We report on temperature dependent measurements of the Longitudinal Spin Seebeck Effect (LSSE) in the mixed valent manganite La$_{0.7}$Ca$_{0.3}$MnO$_3$. By disentangling the contribution arising due to the Anisotropic Nernst effect, we observe that these two thermally driven phenomena vary disparately with temperature. In a narrow low temperature regime, the LSSE exhibits a $T^{0.55}$ dependence, which matches well with that predicted by the magnon-driven spin current model. Across the double exchange driven paramagnetic-ferromagnetic transition, the LSSE exponent is significantly higher than the magnetization one. These observations highlights the importance of individually ascertaining the temperature evolution of different mechanisms which contribute to the measured spin Seebeck signal.
Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario.
Samarium hexaboride (SmB$_6$) is the first strongly correlated material with a recognized non-trivial band-structure topology. Its electron correlations are seen by inelastic neutron scattering as a coherent collective excitation at the energy of 14 meV. Here we calculate the spectrum of this mode using a perturbative slave boson method. Our starting point is the recently constructed Anderson model that properly captures the band-structure topology of SmB$_6$. Most self-consistent renormalization effects are captured by a few phenomenological parameters whose values are fitted to match the calculated and experimentally measured mode spectrum in the first Brillouin zone. A simple band-structure of low-energy quasiparticles in SmB$_6$ is also modeled through this fitting procedure, because the important renormalization effects due to Coulomb interactions are hard to calculate by ab-initio methods. Despite involving uncontrolled approximations, the slave boson calculation is capable of producing a fairly good quantitative match of the energy spectrum, and a qualitative match of the spectral weight throughout the first Brillouin zone. We find that the fitted band-structure required for this match indeed puts SmB$_6$ in the class of strong topological insulators. Our analysis thus provides a detailed physical picture of how the SmB$_6$ band topology arises from strong electron interactions, and paints the collective mode as magnetically active exciton.
Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between less than 0.01 mikrosiemens and up to 1 mS. The position of the spectral anomalies, which are related to the different activation energies and band gaps of SmB6, did not depend on the the contact size. Two different regimes of charge transport could be distinguished: Contacts with large zero - bias conductance are in the diffusive Maxwell regime. They had spectra with only small non-linearities. Contacts with small zero - bias conductance are in the tunnelling regime. They had larger anomalies, but still indicating a finite 45 % residual quasiparticle density of states at the Fermi level at low temperatures of T = 0.1 K. The density of states derived from the tunelling spectra can be decomposed into two energy-dependent parts with Eg = 21 meV and Ed = 4.5 meV wide gaps, respectively.
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