Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTerahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor
128
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the sub-picosecond time scale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a new way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.
rate research
Read More
Optical excitations of BiTeI with large Rashba spin splitting have been studied in an external magnetic field ($B$) applied parallel to the polar axis. A sequence of transitions between the Landau levels (LLs), whose energies are in proportion to $sqrt{B}$ were observed, being characteristic of massless Dirac electrons. The large separation energy between the LLs makes it possible to detect the strongest cyclotron resonance even at room temperature in moderate fields. Unlike in 2D Dirac systems, the magnetic field induced rearrangement of the conductivity spectrum is directly observed.
We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.
Based on a structure consisting of a single graphene layer situated on a periodic dielectric grating, we show theoretically that intense terahertz (THz) radiations can be generated by an electron bunch moving atop the graphene layer. The underlying physics lies in the fact that a moving electron bunch with rather low electron energy ($sim$1 keV) can efficiently excite graphene plasmons (GPs) of THz frequencies with a strong confinement of near-fields. GPs can be further scattered into free space by the grating for those satisfying the phase matching condition. The radiation patterns can be controlled by varying the velocity of the moving electrons. Importantly, the radiation frequencies can be tuned by varying the Fermi level of the graphene layer, offering tunable THz radiations that can cover a wide frequency range. Our results could pave the way toward developing tunable and miniature THz radiation sources based on graphene.
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.
We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (<3 T). By comparison with first-principles calculations, we show that such an enhanced MO response is mainly due to the intraband transitions between the Rashba-split bulk conduction bands in BiTeI, which give rise to distinct novel features and systematic doping dependence of the MO spectra. We further predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
