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Register a new userGiant magneto-optical response in non-magnetic semiconductor BiTeI driven by bulk Rashba spin splitting
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L\\'aszl\\'o Demk\\'o
Publication date
2012
fields
Physics
and research's language is
English
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We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (<3 T). By comparison with first-principles calculations, we show that such an enhanced MO response is mainly due to the intraband transitions between the Rashba-split bulk conduction bands in BiTeI, which give rise to distinct novel features and systematic doping dependence of the MO spectra. We further predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.
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We report the observation of Shubnikov-de Haas (SdH) oscillations in single crystals of the Rashba spin-splitting compound BiTeI, from both longitudinal ($R_{xx}(B)$) and Hall ($R_{xy}(B)$) magnetoresistance. Under magnetic field up to 65 T, we resolved unambiguously only one frequency $F = 284.3pm 1.3$ T, corresponding to a Fermi momentum $k_{F} = 0.093pm 0.002$AA$^{-1}$.The amplitude of oscillations is strongly suppressed by tilting magnetic field, suggesting a highly two-dimensional Fermi surface. Combining with optical spectroscopy, we show that quantum oscillations may be consistent with a bulk conduction band having a Rashba splitting momentum $k_{R}=0.046pm$AA$^{-1}$.
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer recedes from the Bi layer. Our results indicate that the RSS can be sensitively increased by introducing a vacancy on the Te site to make effective Bi-Te distance shorter. It is also found that the difference of Te p orbital character between two spin-split bands increases when the RSS is developed along crystal momentum, which supports asymmetric interlayer interaction in the spin-split bands. Our work suggests that the modification of interlayer interaction is an effective approach in the modeling of the RSS in BiTeI and other layered materials.
Recently large Rashba-like spin splitting has been observed in certain bulk ferroelectrics. In contrast with the relativistic Rashba effect, the chiral spin texture and large spin-splitting of the electronic bands depend strongly on the character of the band and atomic spin-orbit coupling. We establish that this can be traced back to the so-called orbital Rashba effect, also in the bulk. This leads to an additional dependence on the orbital composition of the bands, which is crucial for a complete picture of the effect. Results from first-principles calculations on ferroelectic GeTe verify the key predictions of the model.
As they combine decent mobilities with extremely long carrier lifetimes, organic-inorganic perovskites have opened a whole new field in opto-electronics. Measurements of their underlying electronic structure, however, are still lacking. Using angle-resolved photoelectron spectroscopy, we measure the valence band dispersion of single-crystal CH$_3$NH$_3$PbBr$_3$. The dispersion of the highest energy band is extracted applying a modified leading edge method, which accounts for the particular density of states of organic-inorganic perovskites. The surface Brillouin zone is consistent with bulk-terminated surfaces both in the low-temperature orthorhombic and the high-temperature cubic phase. In the low-temperature phase, we find a ring-shaped valence band maximum with a radius of 0.043 {AA}$^{-1}$, centered around a 0.16 eV deep local minimum in the dispersion of the valence band at the high-symmetry point. Intense circular dichroism is observed. This dispersion is the result of strong spin-orbit coupling. Spin-orbit coupling is also present in the room-temperature phase. The coupling strength is one of the largest reported so far.
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