No Arabic abstract
The dimensionality of an electronic quantum system is decisive for its properties. In 1D electrons form a Luttinger liquid and in 2D they exhibit the quantum Hall effect. However, very little is known about the behavior of electrons in non-integer, i.e. fractional dimensions. Here, we show how arrays of artificial atoms can be defined by controlled positioning of CO molecules on a Cu(111) surface, and how these sites couple to form electronic Sierpinski fractals. We characterize the electron wavefunctions at different energies with scanning tunneling microscopy and spectroscopy and show that they inherit the fractional dimension. Wavefunctions delocalized over the Sierpinski structure decompose into self-similar parts at higher energy, and this scale invariance can also be retrieved in reciprocal space. Our results show that electronic quantum fractals can be man-made by atomic manipulation in a scanning tunneling microscope. The same methodology will allow to address fundamental questions on the effects of spin-orbit interaction and a magnetic field on electrons in non-integer dimensions. Moreover, the rational concept of artificial atoms can readily be transferred to planar semiconductor electronics, allowing for the exploration of electrons in a well-defined fractal geometry, including interactions and external fields.
We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing atoms in a rearranged atomic network formed by two pentagons and one octagon, with no dangling bonds. Scanning tunneling spectroscopy (STS) measurements on divacancies generated in nearly ideal graphene show an electronic spectrum dominated by an empty-states resonance, which is ascribed to a spin-degenerated nearly flat band of $pi$-electron nature. While the calculated electronic structure rules out the formation of a magnetic moment around the divacancy, the generation of an electronic resonance near the Fermi level, reveals divacancies as key point defects for tuning electron transport properties in graphene systems.
We present a design for a switchable nanomagnetic atom mirror formed by an array of 180{deg} domain walls confined within Ni80Fe20 planar nanowires. A simple analytical model is developed which allows the magnetic field produced by the domain wall array to be calculated. This model is then used to optimize the geometry of the nanowires so as to maximize the reflectivity of the atom mirror. We then describe the fabrication of a nanowire array and characterize its magnetic behavior using magneto-optic Kerr effect magnetometry, scanning Hall probe microscopy and micromagnetic simulations, demonstrating how the mobility of the domain walls allow the atom mirror to be switched on and off in a manner which would be impossible for conventional designs. Finally, we model the reflection of 87Rb atoms from the atom mirrors surface, showing that our design is well suited for investigating interactions between domain walls and cold atoms.
Organic charge-transfer complexes (CTCs) formed by strong electron acceptor and strong electron donor molecules are known to exhibit exotic effects such as superconductivity and charge density waves. We present a low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) study of a two-dimensional (2D) monolayer CTC of tetrathiafulvalene (TTF) and fluorinated tetracyanoquinodimethane (F4TCNQ), self-assembled on the surface of oxygen-intercalated epitaxial graphene on Ir(111) (G/O/Ir(111)). We confirm the formation of the charge-transfer complex by dI/dV spectroscopy and direct imaging of the singly-occupied molecular orbitals. High-resolution spectroscopy reveals a gap at zero bias, suggesting the formation of a correlated ground state at low temperatures. These results point to the possibility to realize and study correlated ground states in charge-transfer complex monolayers on weakly interacting surfaces.
The extraordinary electronic and optical properties of the crystal-to-amorphous transition in phase-change materials led to important developments in memory applications. A promising outlook is offered by nanoscaling such phase-change structures. Following this research line, we study the interband optical transmission spectra of nanoscaled GeTe/Sb$_2$Te$_3$ chalcogenide superlattice films. We determine, for films with varying stacking sequence and growth methods, the density and scattering time of the free electrons, and the characteristics of the valence-to-conduction transition. It is found that the free electron density decreases with increasing GeTe content, for sub-layer thickness below $sim$3 nm. A simple band model analysis suggests that GeTe and Sb$_2$Te$_3$ layers mix, forming a standard GeSbTe alloy buffer layer. We show that it is possible to control the electronic transport properties of the films by properly choosing the deposition layer thickness and we derive a model for arbitrary film stacks.
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.