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Register a new userObservation of a superconducting glass state in granular superconducting diamond
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The magnetic field dependence of the superconductivity in nanocrystalline boron doped diamond thin films is reported. Evidence of a glass state in the phase diagram is presented, as demonstrated by electrical resistance and magnetic relaxation measurements. The position of the phase boundary in the H-T plane is determined from resistance data by detailed fitting to zero-dimensional fluctuation conductivity theory. This allows determination of the boundary between resistive and non-resistive behavior to be made with greater precision than the standard ad hoc onset/midpoint/offset criterion.
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We present resistance versus temperature data for a series of boron-doped nanocrystalline diamond films whose grain size is varied by changing the film thickness. Upon extracting the fluctuation conductivity near to the critical temperature we observe three distinct scaling regions -- 3D intragrain, quasi-0D, and 3D intergrain -- in confirmation of the prediction of Lerner, Varlamov and Vinokur. The location of the dimensional crossovers between these scaling regions allows us to determine the tunnelling energy and the Thouless energy for each film. This is a demonstration of the use of emph{fluctuation spectroscopy} to determine the properties of a superconducting granular system.
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5x10^{21} cm^{-3} and a critical temperature of about 2 K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characterstic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T^{-2}, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature T_c, evidence for an increasing relaxation time on both sides of T_c.
We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.
We report on a detailed study of the optical response and $T_c-rho$ phase diagram ($T_c$ being the superconducting critical temperature and $rho$ the normal state resistivity of the film) of granular aluminum, combining transport measurements and a high resolution optical spectroscopy technique. The $T_c-rho$ phase diagram is discussed as resulting from an interplay between the phase stiffness, the Coulomb repulsion and the superconducting gap $Delta$. We provide a direct evidence for two different types of well resolved sub-gap absorptions, at $omega_1simeqDelta$ and at $Deltalesssimomega_2lesssim2Delta$ (decreasing with increasing resistivity).
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