Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userStructures and Physical Properties of CsV$_2$Se$_{2-x}$O and V$_2$Se$_2$O
98
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
By using solid-state reactions, we successfully synthesize new oxyselenides CsV$_2$Se$_{2-x}$O (x = 0, 0.5). These compounds containing V$_2$O planar layers with a square lattice crystallize in the CeCr$_2$Si$_2$C structure with the space group of $P4/mmm$. Another new compound V$_2$Se$_2$O which crystallizes in space group $I4/mmm$ is fabricated by topochemical deintercalation of cesium from CsV$_2$Se$_2$O powder with iodine in tetrahydrofuran(THF). Resistivity measurements show a semiconducting behavior for CsV$_2$Se$_2$O, while a metallic behavior for CsV$_2$Se$_{1.5}$O, and an insulating feature for V$_2$Se$_2$O. A charge- or spin-density wave-like anomaly has been observed at 168 K for CsV$_2$Se$_2$O and 150 K for CsV$_2$Se$_{1.5}$O, respectively. And these anomalies are also confirmed by the magnetic susceptibility measurements. The resistivity in V$_2$Se$_2$O exhibits an anomalous log(1/$T$) temperature dependence, which is similar to the case in parent phase or very underdoped cuprates indicating the involvement of strong correlation. Magnetic susceptibility measurements show that the magnetic moment per V-site in V$_2$Se$_2$O is much larger than that of CsV$_2$Se$_{2-x}$O, which again suggests the correlation induced localization effect in the former.
rate research
Read More
The electronic structure and magnetic properties of the strongly correlated material La$_2$O$_3$Fe$_2$Se$_2$ are studied by using both the density function theory plus $U$ (DFT+$U$) method and the DFT plus Gutzwiller (DFT+G) variational method. The ground-state magnetic structure of this material obtained with DFT+$U$ is consistent with recent experiments, but its band gap is significantly overestimated by DFT+$U$, even with a small Hubbard $U$ value. In contrast, the DFT+G method yields a band gap of 0.1 - 0.2 eV, in excellent agreement with experiment. Detailed analysis shows that the electronic and magnetic properties of of La$_2$O$_3$Fe$_2$Se$_2$ are strongly affected by charge and spin fluctuations which are missing in the DFT+$U$ method.
Bi$_2$O$_2$Se is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and dielectric measurements in Bi$_2$O$_2$Se single crystals at various carrier densities. The temperature-dependent resistivity ($rho$) indicates a smooth evolution from the semiconducting to the metallic state. The critical concentration for the metal-insulator transition (MIT) to occur is extraordinarily low ($n_textrm{c}sim10^{16}$ cm$^{-3}$). The relative permittivity of the insulating sample is huge ($epsilon_textrm{r}approx155(10)$) and varies slowly with temperature. Combined with the light effective mass, a long effective Bohr radius ($a_textrm{B}^*approx36(2)$ $textrm{nm}$) is derived, which provides a reasonable interpretation of the metallic prematurity according to Motts criterion for MITs. The high electron mobility ($mu$) at low temperatures may result from the screening of ionized scattering centers due to the huge $epsilon_textrm{r}$. Our findings shed light on the electron dynamics in two dimensional (2D) Bi$_2$O$_2$Se devices.
We report pressure-dependent reflection and transmission measurements on ZnCr$_2$Se$_4$, HgCr$_2$S$_4$, and CdCr$_2$O$_4$ single crystals at room temperature over a broad spectral range 200-24000 cm$^{-1}$. The pressure dependence of the phonon modes and the high-frequency electronic excitations indicates that all three compounds undergo a pressure-induced structural phase transition with the critical pressure 15 GPa, 12 GPa, and 10 GPa for CdCr$_2$O$_4$, HgCr$_2$S$_4$, and ZnCr$_2$Se$_4$, respectively. The eigenfrequencies of the electronic transitions are very close to the expected values for chromium crystal-field transitions. In the case of the chalcogenides pressure induces a red shift of the electronic excitation which indicates a strong hybridization of the Cr d-bands with the chalcogenide bands.
Superconductors and multiferroics are two of the hottest branches in condensed matter physics. The connections between those two fields are fundamentally meaningful to unify the physical rules of correlated electrons. Recently, BaFe$_2$Se$_3$, was predicted to be multiferroic [Phys. Rev. Lett. 113, 187204 (2014)] due to its unique one-dimensional block-type antiferromagnetism. Here, another iron-selenide KFe$_2$Se$_2$, a parent state of iron-based superconductor, is predicted to be multiferroic. Its two-dimensional block-type antiferromagnetism can generate a moderate electric dipole for each Fe-Se layer via the Fe-Se-Fe exchange striction. Different stacking configurations of these magnetic blocks give closely proximate energies and thus the ground state of KFe$_2$Se$_2$ may be switchable between antiferroelectric and ferroelectric phases.
Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for developing spintronic and topological quantum devices, if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Here, we report on experimental determination of the strength of spin-orbit interaction in Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of the magnetoconductance based on an interference theory which describes the quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Comparing to other semiconductor nanostructures, the extracted relatively short spin relaxation length of ~150 nm indicates the existence of strong spin-orbit interaction in Bi$_2$O$_2$Se nanolayers.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
