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Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $rm Bi_2Se_3$ / $rm SrRuO_3$ / underdoped $rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics

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 Added by Gad Koren
 Publication date 2018
  fields Physics
and research's language is English
 Authors Gad Koren




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We report properties of topological insulator - ferromagnet - superconductor trilayers comprised of thin films of 20 nm thick $rm Bi_2Se_3$ on 10 nm $rm SrRuO_3$ on 30 nm $rm YBa_2Cu_3O_x$. As deposited trilayers are underdoped and have a superconductive transition with $rm T_c$ onset at 75 K, zero resistance at 65 K, $rm T_{Cueri}$ at 150 K and $rm T^*$ of about 200 K. Further reannealing under vacuum yields the 60 K phase of $rm YBa_2Cu_3O_x$ which still has zero resistance below about 40 K. Only when $10times 100$ micro-bridges were patterned in the trilayer, some of the bridges showed resistive behavior all the way down to low temperatures. Magnetoresistance versus temperature of the superconductive ones showed the typical peak due to flux flow against pinning below $rm T_c$, while the resistive ones showed only the broad leading edge of such a peak. All this indicates clearly weak-link superconductivity in the resistive bridges between superconductive $rm YBa_2Cu_3O_x$ grains via the topological and ferromagnetic cap layers. Comparing our results to those of a reference trilayer with the topological $rm Bi_2Se_3$ layer substituted by a non-superconducting highly overdoped $rm La_{1.65}Sr_{0.35}CuO_4$, indicates that the superconductive proximity effect as well as ferromagnetism in the topological trilayer are actually strongly suppressed compared to the non-topological reference trilayer. This strong suppression is likely to originate in strong proximity induced edge currents in the SRO/YBCO layer that can lead to Majorana bound states, a possible signature of which is observed in the present study as zero bias conductance peaks.



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67 - L. Klein , Y. Kats , N. Wiser 2000
We have measured the change in the resistivity of thin films of ${rm SrRuO_3}$ and ${rm CaRuO_3}$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessens rule. For a fixed irradiation dose, the induced change in resistivity {it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.
105 - Gad Koren 2015
Ultrathin $rm Bi_2Se_3$-NbN bilayers comprise a simple proximity system of a topological insulator and an s-wave superconductor for studying gating effects on topological superconductors. Here we report on 3 nm thick NbN layers of weakly connected superconducting islands, overlayed with 10 nm thick $rm Bi_2Se_3$ film which facilitates enhanced proximity coupling between them. Resistance versus temperature of the most resistive bilayers shows insulating behavior but with signs of superconductivity. We measured the magnetoresistance (MR) of these bilayers versus temperature with and without a magnetic field H normal to the wafer (MR=[R(H)-R(0)]/{[R(H)+R(0)]/2}), and under three electric gate-fields of 0 and $pm2$ MV/cm. The MR results showed a complex set of gate sensitive peaks which extended up to about 30 K. The results are discussed in terms of vortex physics, and the origin of the different MR peaks is identified and attributed to flux-flow MR in the isolated NbN islands and the different proximity regions in the $rm Bi_2Se_3$ cap-layer. The dominant MR peak was found to be consistent with enhanced proximity induced superconductivity in the topological edge currents regions. The high temperature MR data suggest a possible pseudogap phase or a highly extended fluctuation regime.
$rm SrRuO_3$ is an itinerant ferromagnet with $T_c sim 150 rm K$. When $rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial magnetocrystalline anisotropy. We find that the ferromagnetic domain walls clearly enhance the resisitivity of $rm SrRuO_3$ and that the enhancement has different temperature dependence for currents parallel and perpendicular to the domain walls. We discuss possible interpretations of our results.
241 - V. Baledent , D. Haug , Y. Sidis 2010
We report a polarized neutron scattering study of the orbital-like magnetic order in strongly underdoped ${rm YBa_2Cu_3O_{6.45}}$ and ${rm YBa_2(Cu_{0.98}Zn_{0.02})_3O_{6.6}}$. Their hole doping levels are located on both sides of the critical doping $p_{MI}$ of a metal-insulator transition inferred from transport measurements. Our study reveals a drop down of the orbital-like order slightly below $p_{MI}$ with a steep decrease of both the ordering temperature $T_{mag}$ and the ordered moment. Above $p_{MI}$, substitution of quantum impurities does not change $T_{mag}$, whereas it lowers significantly the bulk ordered moment. The modifications of the orbital-like magnetic order are interpreted in terms of a competition with electronic liquid crystal phases around $p_{MI}$. This competition gives rise to a mixed magnetic state in ${rm YBa_2Cu_3O_{6.45}}$ and a phase separation in ${rm YBa_2(Cu_{0.98}Zn_{0.02})_3O_{6.6}}$.
83 - S.Kundu , V.Tripathi 2017
We study the effect of Hunds splitting of repulsive interactions on electronic phase transitions in the multiorbital topological crystalline insulator Pb$_{1-x}$Sn$_{x}$Te, when the chemical potential is tuned to the vicinity of low-lying Type-II Van Hove singularities. Nontrivial Berry phases associated with the Bloch states impart momentum-dependence to electron interactions in the relevant band. We use a multipatch parquet renormalization group (RG) analysis for studying the competition of different electronic phases, and find that if the dominant fixed-point interactions correspond to antiparallel spin configurations, then a chiral $p$-wave Fulde-Ferrell-Larkin-Ovchinnikov(FFLO) state is favored, otherwise, none of the commonly encountered electronic instabilities occur within the one-loop parquet RG approach.
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