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Register a new userObservation of domain wall resistivity in $rm SrRuO_3$
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$rm SrRuO_3$ is an itinerant ferromagnet with $T_c sim 150 rm K$. When $rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial magnetocrystalline anisotropy. We find that the ferromagnetic domain walls clearly enhance the resisitivity of $rm SrRuO_3$ and that the enhancement has different temperature dependence for currents parallel and perpendicular to the domain walls. We discuss possible interpretations of our results.
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We have measured the change in the resistivity of thin films of ${rm SrRuO_3}$ and ${rm CaRuO_3}$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessens rule. For a fixed irradiation dose, the induced change in resistivity {it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.
${rm SrRuO_3}$ is a 4d itinerant ferromagnet (T$_{c}$ $sim $150 K) with stripe domain structure. Using high-quality thin films of SrRuO$_{3}$ we study the resistivity induced by its very narrow ($sim 3$ nm) Bloch domain walls, $rho_{DW}$ (DWR), at temperatures between 2 K and T$_{c}$ as a function of the angle, $theta $, between the electric current and the ferromagnetic domains walls. We find that $rho_{DW}(T,theta)=sin^2theta rho_{DW}(T,90)+B(theta)rho_{DW}(T,0)$ which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is $sin^2theta$. We expect magnetic multilayers to exhibit a similar behavior.
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We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.
We study the ground-state entanglement of gapped domain walls between topologically ordered systems in two spatial dimensions. We derive a universal correction to the ground-state entanglement entropy, which is equal to the logarithm of the total quantum dimension of a set of superselection sectors localized on the domain wall. This expression is derived from the recently proposed entanglement bootstrap method.
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