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Register a new userZero field optical magnetic resonance study of phosphorus donors in 28-silicon
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Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous qubit initialization, manipulation and readout fidelities near ~99.9%. Here we characterize the phosphorus in silicon system in the regime of zero magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ~10 s Hahn echo coherence times, even at Earths magnetic field and below.
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The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of $1.7pm0.2 rm{mu s}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $xleq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Greens function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal $(T_1)$ and transverse $(T_2)$ relaxation times of phosphorus donors in bulk silicon with various electric field strengths up to near avalanche breakdown in high magnetic fields of about 1.2 T and low temperatures of about 8 K. We find that the $T_1$ relaxation time is significantly reduced under large electric fields due to electric current, and $T_2$ is affected as the $T_1$ process can dominate decoherence. Furthermore, we show that the magnetoresistance effect in silicon can be exploited as a means to combat the reduction in the coherence times. While qubit coherence times must be much longer than quantum gate times, electrically accelerated $T_1$ can be found useful when qubit state initialization relies on thermal equilibration.
This paper describes a general method for manipulation of nuclear spins in zero magnetic field. In the absence of magnetic fields, the spins lose the individual information on chemical shifts and inequivalent spins can only be distinguished by nuclear gyromagnetic ratios and spin-spin couplings. For spin-1/2 nuclei with different gyromagnetic ratios (i.e., different species) in zero magnetic field, we describe the scheme to realize a set of universal quantum logic gates, e.g., arbitrary single-qubit gates and two-qubit controlled-NOT gate. This method allows for universal quantum control in systems which might provide promising applications in materials science, chemistry, biology,quantum information processing and fundamental physics.
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