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Register a new userMagnetic and Superconducting Phase Diagram of Nb/Gd/Nb trilayers
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We report on a study of the structural, magnetic and superconducting properties of Nb(25nm)/Gd($d_f$)/Nb(25nm) hybrid structures of a superconductor/ ferromagnet (S/F) type. The structural characterization of the samples, including careful determination of the layer thickness, was performed using neutron and X-ray scattering with the aid of depth sensitive mass-spectrometry. The magnetization of the samples was determined by SQUID magnetometry and polarized neutron reflectometry and the presence of magnetic ordering for all samples down to the thinnest Gd(0.8nm) layer was shown. The analysis of the neutron spin asymmetry allowed us to prove the absence of magnetically dead layers in junctions with Gd interlayer thickness larger than one monolayer. The measured dependence of the superconducting transition temperature $T_c(d_f)$ has a damped oscillatory behavior with well defined positions of the minimum at $d_f$=3nm and the following maximum at $d_f$=4nm; the behavior, which is in qualitative agreement with the prior work (J.S. Jiang et al, PRB 54, 6119). The analysis of the $T_c(d_f)$ dependence based on Usadel equations showed that the observed minimum at $d_f$=3nm can be described by the so called $0$ to $pi$ phase transition of highly transparent S/F interfaces with the superconducting correlation length $xi_f approx 4$nm in Gd. This penetration length is several times higher than for strong ferromagnets like Fe, Co or Ni, simplifying thus preparation of S/F structures with $d_f sim xi_f$ which are of topical interest in superconducting spintronics.
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Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.
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