No Arabic abstract
Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts. Since the first isolation of graphene in 2004, the number of new 2D materials with favorable properties for electronics has been growing. Dopants in 2 dimensional systems are more tightly bound and potentially easier to position and manipulate. Considering the properties of currently available 2D materials, we access the feasibility of such proposal in terms of the manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as the currently studied bulk host for donor qubits.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
Experimental and theoretical progress toward quantum computation with spins in quantum dots (QDs) is reviewed, with particular focus on QDs formed in GaAs heterostructures, on nanowire-based QDs, and on self-assembled QDs. We report on a remarkable evolution of the field where decoherence, one of the main challenges for realizing quantum computers, no longer seems to be the stumbling block it had originally been considered. General concepts, relevant quantities, and basic requirements for spin-based quantum computing are explained; opportunities and challenges of spin-orbit interaction and nuclear spins are reviewed. We discuss recent achievements, present current theoretical proposals, and make several suggestions for further experiments.
We introduce a scheme for preparation, manipulation, and readout of Majorana zero modes in semiconducting wires with mesoscopic superconducting islands. Our approach synthesizes recent advances in materials growth with tools commonly used in quantum-dot experiments, including gate-control of tunnel barriers and Coulomb effects, charge sensing, and charge pumping. We outline a sequence of milestones interpolating between zero-mode detection and quantum computing that includes (1) detection of fusion rules for non-Abelian anyons using either proximal charge sensors or pumped current; (2) validation of a prototype topological qubit; and (3) demonstration of non-Abelian statistics by braiding in a branched geometry. The first two milestones require only a single wire with two islands, and additionally enable sensitive measurements of the systems excitation gap, quasiparticle poisoning rates, residual Majorana zero-mode splittings, and topological-qubit coherence times. These pre-braiding experiments can be adapted to other manipulation and readout schemes as well.
We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside optical waveguides. Bringing the electron ensembles in a quantum Hall state gives selection rules for optical transitions across the gap that can selectively address the two electron spin states. Long-lived superpositions of these electron spin states can then be controlled with a pair of optical fields that form a resonant Raman system. Entangled states of spin-wave modes are prepared by applying quantum-optical measurement techniques to optical signal pulses that result from Raman transitions in the electron ensembles.
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.