No Arabic abstract
We present a new model of plasma-condensate system, by taking into account an anisotropy of transference reactions of adatoms between neighbor layers of multi-layer system, caused by the strength of the electric field near substrate. We discuss an influence of the strength of the electric field onto first-order phase transitions and conditions for adsorbate patterning in plasma-condensate systems. It is shown that separated pyramidal-like multi-layer adsorbate islands can be formed in the plasma-condensate system if the strength of the electric field near substrate becomes larger tan the critical value, which depends on the interaction energy of adsorbate and adsorption coefficient.
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.
Band gap control by an external field is useful in various optical, infrared and THz applications. However, widely tunable band gaps are still not practical due to variety of reasons. Using the orthogonal tight-binding method for $pi$-electrons, we have investigated the effect of the external electric field on a subclass of monolayer chevron-type graphene nanoribbons that can be referred to as jagged graphene nanoribbons. A classification of such ribbons was proposed and band gaps for applied fields up to the SiO$_2$ breakdown strength ($1$ V/nm) were calculated. According to the tight-binding model, band gap opening (or closing) takes place for some type of jagged graphene nanoribbons in the external electric field that lays in the plane of the structure and perpendicular to its longitudinal axis. Tunability of the band gap up to $0.6$ eV is attainable for narrow ribbons. In the case of jagged ribbons with armchair edges larger jags forming a chevron pattern of the ribbon enhance the controllability of the band gap. For jagged ribbons with zigzag and armchair edges regions of linear and quadratic dependence of the band gap on the external electric field can be found that are useful in devices with controllable modulation of the band gap.
We study the geometric and electronic structures of silicene monolayer using density functional theory based calculations. The electronic structures of silicene show that it is a semi-metal and the charge carriers in silicene behave like massless Dirac-Fermions since it possesses linear dispersion around Dirac point. Our results show that the band gap in silicene monolayer can be opened up at Fermi level due to an external electric field by breaking the inversion symmetry. The presence of buckling in geometric structure of silicene plays an important role in breaking the inversion symmetry. We also show that the band gap varies linearly with the strength of external electric field. Further, the value of band gap can be tuned over a wide range.
We derive the stochastic model of plasma-condensate systems by taking into account anisotropy in transference of adatoms between neighbor layers and by introducing fluctuations of adsorbate flux. We show, that by varying the fluctuations intensity on can govern dynamics of pattern formation on intermediate layer of multi-layer plasma-condensate system. It is shown that the morphology of the growing surface, type of surface structures and their linear size can be controlled by the intensity of the adsorbate flux fluctuations.