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Register a new userVO$_2$ as a natural optical metamaterial
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VO$_2$ is a unique phase change material with strongly anisotropic electronic properties. Recently, samples have been prepared that present a co-existence of phases and thus form metal-insulator junctions of the same chemical compound. Using first principles calculations, the optical properties of metallic and semiconducting VO$_2$ are here discussed to design self-contained natural optical metamaterials, avoiding coupling with other dielectric media. The analysis of the optical properties complements the experiments in the description of the vast change in reflectance and metallicity for both disordered and planar compounds. The present results also predict the possibility to realize ordered VO$_2$ junctions operating as efficient hyperbolic metamaterials in the THz-visible range, by simply adjusting the ratio between metallic and insulating VO$_2$ content. The possibility to excite propagating {em volume plasmom polariton} across the metamaterial is finally discussed.
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Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO$_2$ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*$sim$10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P$>$P*. Differently from ambient pressure, where the VO$_2$ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO$_2$.
Experimentally Cr doping in the rutile phase of VO$_2$ is found to stabilize a charge ordered ferromagnetic insulating state in the doping range of 10% to 20%. In this work, we investigated its origin at 12.5% Cr doping using a combination of ab-initio electronic structure calculations as well as microscopic modeling. Our calculations are found to reproduce the ferromagnetic insulating state as well as a charge ordering at the V and Cr sites. The mapping of the ab-initio band structure onto a tight-binding Hamiltonian allows one to calculate the energy gain from different exchange pathways. This gain is quantified in this work for the first time and the role of charge ordering in stabilizing a ferromagnetic insulating state is understood.
In this work we present a comparative investigation of the electronic structures of NbO$_2$ and VO$_2$ obtained within the combination of density functional theory and cluster-dynamical mean field theory calculations. We investigate the role of dynamic electronic correlations on the electronic structure of the metallic and insulating phases of NbO$_2$ and VO$_2$, with focus on the mechanism responsible for the gap opening in the insulating phases. For the rutile metallic phases of both oxides, we obtain that electronic correlations lead to strong renormalization of the $t_{2g}$ subbands, as well as the emergence of incoherent Hubbard subbands, signaling that electronic correlations are also important in the metallic phase of NbO$_2$. Interestingly, we find that nonlocal dynamic correlations do play a role in the gap formation of the (bct) insulating phase of NbO$_2$, by a similar physical mechanism as that recently proposed by us in the case of the (M$_1$) dimerized phase of VO$_2$ (textit{Phys. Rev. Lett. 117, 056402 (2016)}). Although the effect of nonlocal dynamic correlations in the gap opening of bct phase is less important than in the (M$_1$ and M$_2$) monoclinic phases of VO$_2$, their presence indicates that the former is not a purely Peierls-type insulator, as it was recently proposed.
Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} sim 340K$. It has been experimentally shown that one can control this transition by doping VO$_2$. In particular, doping with oxygen vacancies ($V_O$) has been shown to completely suppress this MIT {em without} any structural transition. We explain this suppression by elucidating the influence of oxygen-vacancies on the electronic-structure of the metallic $R$ phase VO$_2$, explicitly treating strong electron-electron correlations using dynamical mean-field theory (DMFT) as well as diffusion Monte Carlo (DMC) flavor of quantum Monte Carlo (QMC) techniques. We show that $V_O$s tend to change the V-3$d$ filling away from its nominal half-filled value, with the $e_{g}^{pi}$ orbitals competing with the otherwise dominant $a_{1g}$ orbital. Loss of this near orbital polarization of the $a_{1g}$ orbital is associated with a weakening of electron correlations, especially along the V-V dimerization direction. This removes a charge-density wave (CDW) instability along this direction above a critical doping concentration, which further suppresses the metal-insulator transition. Our study also suggests that the MIT is predominantly driven by a correlation-induced CDW instability along the V-V dimerization direction.
The layered crystal of EuSn$_2$As$_2$ has a Bi$_2$Te$_3$-type structure in rhombohedral ($Rbar{3}m$) symmetry and has been confirmed to be an intrinsic magnetic topological insulator at ambient conditions. Combining {it ab initio} calculations and emph{in-situ} x-ray diffraction measurements, we identify a new monoclinic EuSn$_2$As$_2$ structure in $C2/m$ symmetry above $sim$14 GPa. It has a three-dimensional network made up of honeycomb-like Sn sheets and zigzag As chains, transformed from the layered EuSn$_2$As$_2$ via a two-stage reconstruction mechanism with the connecting of Sn-Sn and As-As atoms successively between the buckled SnAs layers. Its dynamic structural stability has been verified by phonon mode analysis. Electrical resistance measurements reveal an insulator-metal-superconductor transition at low temperature around 5 and 15 GPa, respectively, according to the structural conversion, and the superconductivity with a textit{T}${rm {_C}}$ value of $sim 4$ K is observed up to 30.8 GPa. These results establish a high-pressure EuSn$_2$As$_2$ phase with intriguing structural and electronic properties and expand our understandings about the layered magnetic topological insulators.
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