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Register a new userReaction paths of alane dissociation on the Si(001) surface
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Building on our earlier study, we examine the kinetic barriers to decomposition of alane, AlH$_3$, on the Si(001) surface, using the nudged elastic band (NEB) approach within DFT. We find that the initial decomposition to AlH with two H atoms on the surface proceeds without a significant barrier. There are several pathways available to lose the final hydrogen, though these present barriers of up to 1 eV. Incorporation is more challenging, with the initial structures less stable in several cases than the starting structures, just as was found for phosphorus. We identify a stable route for Al incorporation following selective surface hydrogen desorption (e.g. by STM tip). The overall process parallels PH$_3$, and indicates that atomically precise acceptor doping should be possible.
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Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated split-off dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual bean-shaped protrusions. We attribute this to the formation of pi-bonds between the two atoms of the split-off dimer and second layer atoms, and present charge density plots to support this assignment. We observe a local brightness enhancement due to strain for different DV complexes and provide the first experimental confirmation of an earlier prediction that the 1+2-DV induces less surface strain than other DV complexes. Finally, we present a previously unreported triangular shaped split-off dimer defect complex that exists at SB-type step edges, and propose a structure for this defect involving a bound Si monomer.
Atomic-scale chemical modification of surface-adsorbed ethyl groups on Si(001) was induced and studied by means of scanning tunneling microscopy. Tunneling at sample bias > +1.5V leads to tip-induced C-H cleavage of a $beta$-hydrogen of the covalently bound ethyl configuration. The reaction is characterized by the formation of an additional Si-H and a Si-C bond. The reaction probability shows a linear dependence on the tunneling current at 300 K; the reaction is largely suppressed at 50 K. The observed tip-induced surface reaction at room temperature is thus attributed to a one-electron excitation in combination with thermal activation.
This paper has been withdrawn by the authors (see text).
The bonding pattern of a covalent semiconductor is disrupted when a surface is cut while keeping a rigid (truncated bulk) geometry. The covalent bonds are partly reformed (with a sizeable energy gain) when reconstruction is allowed. We show that the ``electron localization function (ELF)---applied within a first--principles pseudopotential framework---provides un unprecedented insight into the bonding mechanisms. In the unreconstructed surface one detects a partly metallic character, which disappears upon reconstruction. In the surface reformed bonds, the ELF sharply visualizes strongly paired electrons, similar in character to those of the bulk bonds.
The interaction of CO with the Fe3O4(001)-(rt2xrt2)R45{deg} surface was studied using temperature programmed desorption (TPD), scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS), the latter both under ultrahigh vacuum (UHV) conditions and in CO pressures up to 1 mbar. In general, the CO-Fe3O4 interaction is found to be weak. The strongest adsorption occurs at surface defects, leading to small TPD peaks at 115 K, 130 K and 190 K. Desorption from the regular surface occurs in two distinct regimes. For coverages up to 2 CO molecules per (rt2xrt2)R45{deg} unit cell, the desorption maximum shows a large shift with increasing coverage, from initially 105 K to 70 K. For coverages between 2 and 4 molecules per (rt2xrt2)R45{deg} unit cell, a much sharper desorption feature emerges at 50 K. Thermodynamic analysis of the TPD data suggests a phase transition from a dilute 2D gas into an ordered overlayer with CO molecules bound to surface Fe3+ sites. XPS data acquired at 45 K in UHV are consistent with physisorption. Some carbon-containing species are observed in the near-ambient-pressure XPS experiments at room temperature, but are attributed to contamination and/or reaction with CO with water from the residual gas. No evidence was found for surface reduction or carburization by CO molecules.
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