No Arabic abstract
Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid crystal smectic phase.
Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $ u=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two descriptions of the half-filled Landau level near the quantum critical point: one based on electrons and another on composite fermions.
High-mobility 2D electron systems in a perpendicular magnetic field exhibit zero resistance states (ZRS) when driven with microwave radiation. We study the nonequilibrium phase transition into this ZRS using phenomenological equations of motion to describe the current and density fluctuations. We focus on two models for the transition into a time-independent steady state. Model-I assumes rotational invariance, density conservation, and symmetry under shifting the density globally by a constant. This model is argued to describe physics on small length scales where the density does not vary appreciably from its mean. The ordered state that arises in this case breaks rotational invariance and consists of a uniform current and transverse Hall field. We discuss some properties of this state, such as stability to fluctuations and the appearance of a Goldstone mode associated with the continuous symmetry breaking. Using dynamical renormalization group techniques, we find that with short-range interactions this model can admit a continuous transition described by mean-field theory, whereas with long-range interactions the transition is driven first-order. Model-II, which assumes only rotational invariance and density conservation and is argued to be appropriate on longer length scales, is shown to predict a first-order transition with either short- or long-range interactions. We discuss implications for experiments, including scaling relations and a possible way to detect the Goldstone mode in the case of a continuous transition into the ZRS, as well as possible signatures of a first-order transition in larger samples. We also point out the connection of our work to the well-studied phenomenon of `flocking.
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a threshold carrier density above which this effect is relevant. The predicted value agrees remarkably well with the onset for the insulator to quasi-metallic transition recently observed in several experiments in SiO2-Si and AlGaAs-GaAs heterojunctions.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.