No Arabic abstract
Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $sim$145 K and an effective moment of $sim$4.1 $mu_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $betasim$0.25, $gammasim$1.38 and $deltasim$6.6.
Recently, two-dimensional ferromagnetic semiconductors have been an important class of materials for many potential applications in spintronic devices. Based on density functional theory, we systematically explore the magnetic and electronic properties of CrGeS$_3$ with the monolayer structures. The comparison of total energy between different magnetic states ensures the ferromagnetic ground state of monolayer CrGeS$_3$. It is also shown that ferromagnetic and semiconducting properties are exhibited in monolayer CrGeS$_3$ with the magnetic moment of 3 $mu_{B}$ for each Cr atom, donated mainly by the intense $dp$$sigma$-hybridization of Cr $e_g$-S $p$. There are the bandgap of 0.70 eV of spin-up state in the monolayer structure when 0.77 eV in spin-down state. The global gap is 0.34 eV (2.21 eV by using HSE06 functional), which originates from bonding $dpsigma$ hybridized states of Cr $e_g$-S $p$ and unoccupied Cr $t_{2g}$-Ge $p$ hybridization. Besides, we estimate that the monolayer CrGeS$_3$ possesses the Curie temperature of 161 K by mean-field theory.
The structural, magnetic, and thermodynamic properties of a new plutonium based compound, Pu2Pt3Si5, are reported. Single crystals produced by a Sn-flux technique have been analyzed showing a ferromagnetic behavior at 58 K. Pu2Pt3Si5 crystallizes in the U2Co3Si5-type orthorhombic Iabm structure (72) with atomic parameters a = 9.9226(2) AA, b = 11.4436(2) AA and c = 6.0148(1) AA. The effective (mu_eff ~0.74 mu_B) and saturated (mu_sat ~0.32 B/Pu) moments as well as the Sommerfeld coefficient (gamma_e ~2 mJ.mol-1.K-2/Pu) could point towards 5f localization in this material.
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.
We report the importance of anisotropic Coulomb interactions in DFT+U calculations of the electronic and magnetic properties of Mn$_3$O$_4$. The effects of anisotropic interactions in Mn$^{2+}$ and Mn$^{3+}$ are separately examined by defining two different sets of Hubbard parameters: $U^{2+}$ and $J^{2+}$ for Mn$^{2+}$ and $U^{3+}$ and $J^{3+}$ for Mn$^{3+}$. The anisotropic interactions in Mn$^{3+}$ have a significant impact on the physical properties of Mn$_3$O$_4$ including local magnetic moments, canted angle, spontaneous magnetic moment, and superexchange coupling, but those in Mn$^{2+}$ do not make any noticeable difference. Weak ferromagnetic interchain superexchange, observed in experiments, is predicted only if a sizable anisotropic interaction is considered in Mn$^{3+}$. By analyzing the eigenoccupations of the on-site Mn density matrix, we found that the spin channel involving Mn$^{3+}$ $d_{x^2-y^2}$ orbitals, which governs the 90$^circ$ correlation superexchange, is directly controlled by the anisotropic interactions. These findings demostrate that the exchange correction $J$ for the intraorbital Coulomb potential is of critical importance for first-principles description of reduced Mn oxides containing Mn$^{3+}$ or Mn$^{4+}$.