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Effect of Lead Substitution on LaO0.5F0.5BiS2

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 Added by Satoshi Demura
 Publication date 2017
  fields Physics
and research's language is English




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We examined Lead (Pb) Substitution effect on a single crystal of a layered superconductor LaO0.5F0.5BiS2. Pb concentration dependence of the lattice constant showed slight anomaly at about 8% and 9% substitution of Pb for Bi. These samples showed the enhancement of the superconducting transition temperature and the superconducting volume fraction. Furthermore, these samples showed the anomaly in the temperature dependence of the resistivity at about 150K. These results were not observed in Pb substituted NdO0.7F0.3BiS2. Therefore, the enhancement of the superconducting properties by Pb substitution is related to the structural instability for the pale perturbation in LaO0.5F0.5BiS2.



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We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
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