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Register a new userSwitching Mechanism and the Scalability of vertical-TFETs
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In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region, where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low power applications.
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The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size-scalability, may be altered through interface treatments.
The manipulation of the magnetic direction by using the ultrafast laser pulse is attractive for its great advantages in terms of speed and energy efficiency for information storage applications. However, the heating and helicity effects induced by circularly polarized laser excitation are entangled in the helicity-dependent all-optical switching (HD-AOS), which hinders the understanding of magnetization dynamics involved. Here, by applying a dual-pump laser excitation, first with a linearly polarized (LP) laser pulse followed by a circularly polarized (CP) laser pulse, we identify the timescales and contribution from heating and helicity effects in HD-AOS with a Pt/Co/Pt triple layer. When the sample is preheated by the LP laser pulses to a nearly fully demagnetized state, CP laser pulses with a much-reduced power switches the samples magnetization. By varying the time delay between the two pump pulses, we show that the helicity effect, which gives rise to the deterministic helicity induced switching, onsets instantly upon laser excitation, and only exists for less than 0.2 ps close to the laser pulse duration of 0.15 ps. The results reveal that that the transient magnetization state upon which CP laser pulses impinge is the key factor for achieving HD-AOS, and importantly, the tunability between heating and helicity effects with the unique dual-pump laser excitation approach will enable HD-AOS in a wide range of magnetic material systems for the potential ultrafast spintronics applications.
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile non-contact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
We present a theoretical proposal for the design of a thermal switch based on the anisotropy of the thermal conductivity of PbTiO3 and of the possibility to rotate the ferroelectric polarization with an external electric field. Our calculations are based on an iterative solution of the phonon Boltzmann Transport Equation and rely on interatomic force constants computed within an efficient second-principles density functional theory scheme. We also characterize the hysteresis cycle of the thermal conductivity in presence of an applied electric field and show that the response time would be limited by speed of the ferroelectric switch itself and thus can operate in the high-frequency regime.
We conduct a theoretical study of the bistable optical response of a nanoparticle heterodimer comprised of a closely spaced semiconductor quantum dot and metal nanoparticle. The bistable nature of the response results from the interplay between the quantum dots optical nonlinearity and its self-action (feedback) originating from the presence of the metal nanoparticle. We show that the feedback is governed by a complex valued coupling parameter $G$. Both the real and imaginary parts of $G$ ($G_mathrm{R}$ and $G_mathrm{I}$) play an important role in the occurrence of bistability, which is manifested in an S-shaped dependence of the quantum dot excited state population on the intensity of the external field, and hysteresis of the population. From our calculations, we find that at $G_mathrm{R} = 0$, the critical value for bistability to occur is $G_mathrm{I} = 8Gamma$, whereas at $G_mathrm{I} = 0$, the critical value of $G_mathrm{R} = 4Gamma$, where $Gamma$ is the polarization dephasing rate. Thus, there exist two different (limiting) mechanisms of bistability, depending on whether $G_mathrm{R}$ is much larger or much smaller than $G_mathrm{I}$. We also calculate the bistability phase diagram within the systems parameter space: spanned by $G_mathrm{R}$, $G_mathrm{I}$ and $Delta$, the latter being the detuning between the driving frequency and the transition frequency of the quantum dot. Additionally, switching times from the lower stable branch to the upper one (and {it vise versa}) are calculated as a function of the intensity of the driving field. We show that the conditions for bistability to occur can be realized, for example, for a heterodimer comprised of a closely spaced CdSe (or CdSe/ZnSe) quantum dot and a gold nanosphere.
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