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Register a new userEnhanced Superconductivity and Suppression of Charge-density Wave Order in 2H-TaS$_2$ in the Two-dimensional Limit
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As superconductors are thinned down to the 2D limit, their critical temperature $T_c$ typically decreases. Here we report the opposite behavior, a substantial enhancement of $T_c$ with decreasing thickness, in 2D crystalline superconductor 2H-TaS$_2$. Remarkably, in the monolayer limit, $T_c$ increases to 3.4 K compared to 0.8 K in the bulk. Accompanying this trend in superconductivity, we observe suppression of the charge-density wave (CDW) transition with decreasing thickness. To explain these trends, we perform electronic structure calculations showing that a reduction of the CDW amplitude results in a substantial increase of the density of states at the Fermi energy, which contributes to the enhancement of $T_c$. Our results establish ultra-thin 2H-TaS$_2$ as an ideal platform to study the competition between CDW order and superconductivity.
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The temperature dependence of the phonon spectrum in the superconducting transition metal dichalcogenide 2H-NbS$_2$ is measured by diffuse and inelastic x-ray scattering. A deep, wide and strongly temperature dependent softening, of the two lowest energy longitudinal phonons bands, appears along the $mathrm{Gamma M}$ symmetry line in reciprocal space. In sharp contrast to the iso-electronic compounds 2H-NbSe$_2$, the soft phonons energies are finite, even at very low temperature, and no charge density wave instability occurs, in disagreement with harmonic ab-initio calculations. We show that 2H-NbS$_2$ is at the verge of the charge density wave transition and its occurrence is only suppressed by the large anharmonic effects. Moreover, the anharmonicity and the electron phonon coupling both show a strong in-plane anisotropy.
The pressure evolution of the Raman active electronic excitations of the transition metal dichalcogenides 2H-TaS$_2$ is followed through the pressure phase diagram embedding incommensurate charge-density-wave and superconducting states. At high pressure, the charge-density-wave is found to collapse at 8.5~GPa. In the coexisting charge-density-wave and superconducting orders, we unravel a strong in-gap superconducting mode, attributed to a Higgs mode, coexisting with the expected incoherent Cooper-pair breaking signature. The latter remains in the pure superconducting state reached above 8.5~GPa. Our report constitutes the first observation of such Raman active Higgs mode since the longstanding unique case 2H-NbSe$_2$.
We report pressure evolution of charge density wave (CDW) order and emergence of superconductivity (SC) in 1T-VSe2 single crystal by studying resistance and magnetoresistance behavior under high pressure. With increasing quasi-hydrostatic pressure the CDW order enhances with increase ofthe ordering temperature up to 240K at 12 GPa. Upon further increase of pressure, the resistance anomaly due to CDW order gets suppressed drastically and superconductivity emerges at ~15 GPa, with the onset critical temperature (Tc) ~ 4K. The pressure dependence of Tc is found negligible, different from the significant increase or a dome-shape seen in iso-structural layered diselenide superconductors. The high pressure magnetoresistance and Hall measurements suggest successive electronic structural changes with Fermi surface modifications at 6 GPa and 12GPa. From the observed negative magnetoresistance in this pressure range and absence of coexisting CDW and SC phases, we propose that intra-layer spin-fluctuation can play a role in the emergence of superconductivity in the high pressure phase.
Understanding the complexities of electronic and magnetic ground states in solids is one of the main goals of solid-state physics. Materials with the canonical ThCr$_2$Si$_2$-type structure have proved particularly fruitful in this regards, as they exhibit a wide range of technologically advantageous physical properties described by many-body physics, including high-temperature superconductivity and heavy fermion behavior. Here, using high-resolution synchrotron X-ray diffraction and time-of-flight neutron scattering, we show that the isostructural mixed valence compound, KNi$_2$S$_2$, displays a number of highly unusual structural transitions, most notably the presence of charge density wave fluctuations that disappear on cooling. This behavior occurs without magnetic or charge order, in contrast to expectations based on all other known materials. Furthermore, the low-temperature electronic state of KNi$_2$S$_2$ is found to exhibit many characteristics of heavy-fermion behavior, including a heavy electron state ($m^*/m_e sim$ 24), with a negative coefficient of thermal expansion, and superconductivity below $T_c$ = 0.46(2) K. In the potassium nickel sulfide, these behaviors arise in the absence of localized magnetism, and instead appear to originate in proximity to charge order.
Despite being usually considered two competing phenomena, charge-density-wave and superconductivity coexist in few systems, the most emblematic one being the transition metal dichalcogenide 2H-NbSe$_2$. This unusual condition is responsible for specific Raman signatures across the two phase transitions in this compound. While the appearance of a soft phonon mode is a well-established fingerprint of the charge-density-wave order, the nature of the sharp sub-gap mode emerging below the superconducting temperature is still under debate. In this work we use the external pressure as a knob to unveil the delicate interplay between the two orders, and consequently the nature of the superconducting mode. Thanks to an advanced extreme-conditions Raman technique we are able to follow the pressure evolution and the simultaneous collapse of the two intertwined charge density wave and superconducting modes. The comparison with microscopic calculations in a model system supports the Higgs-type nature of the superconducting mode and suggests that charge-density-wave and superconductivity in 2H-NbSe$_2$ involve mutual electronic degrees of freedom. These findings fill knowledge gap on the electronic mechanisms at play in transition metal dichalcogenides, a crucial step to fully exploit their properties in few-layers systems optimized for devices applications.
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